Formation of {111} oriented domains during the sputtering epitaxy growth of (001) oriented Iridium films

In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One consists of sharp "fjord"-shaped features in which four 90° alternated rotational variants of {111} are possible and the second one...

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Published inJournal of physics. Condensed matter Vol. 36; no. 40; pp. 405001 - 405009
Main Authors Weippert, Jürgen, Kirste, Lutz, Straňák, Patrik, Sundarapandian, Balasubramanian, Engels, Jan, Oeser, Sabine, Graff, Andreas, Lebedev, Vadim
Format Journal Article
LanguageEnglish
Published England IOP Publishing 09.10.2024
Subjects
defects
EBSD
epitaxy
microscopy
sputtering
TEM
microscopy
sputtering
TEM
EBSD
epitaxy
defects
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Abstract In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One consists of sharp "fjord"-shaped features in which four 90° alternated rotational variants of {111} are possible and the second one consists of islands with less defined shapes in which eight 45° alternated rotational variants can be found. Their formation occurs directly at the Ir/YSZ interface along incoherent grain boundaries, likely nucleating at local defects of the YSZ surface. In order to avoid these misoriented domains, process separation and proper etching pretreatment of the wafers both before and between the sputtering processes have been found to be the key strategy for achieving reproducibility and overall better material quality.
AbstractList Abstract In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One consists of sharp ‘fjord’-shaped features in which four 90° alternated rotational variants of {111} are possible and the second one consists of islands with less defined shapes in which eight 45° alternated rotational variants can be found. Their formation occurs directly at the Ir/YSZ interface along incoherent grain boundaries, likely nucleating at local defects of the YSZ surface. In order to avoid these misoriented domains, process separation and proper etching pretreatment of the wafers both before and between the sputtering processes have been found to be the key strategy for achieving reproducibility and overall better material quality.
In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One consists of sharp 'fjord'-shaped features in which four 90° alternated rotational variants of {111} are possible and the second one consists of islands with less defined shapes in which eight 45° alternated rotational variants can be found. Their formation occurs directly at the Ir/YSZ interface along incoherent grain boundaries, likely nucleating at local defects of the YSZ surface. In order to avoid these misoriented domains, process separation and proper etching pretreatment of the wafers both before and between the sputtering processes have been found to be the key strategy for achieving reproducibility and overall better material quality.In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One consists of sharp 'fjord'-shaped features in which four 90° alternated rotational variants of {111} are possible and the second one consists of islands with less defined shapes in which eight 45° alternated rotational variants can be found. Their formation occurs directly at the Ir/YSZ interface along incoherent grain boundaries, likely nucleating at local defects of the YSZ surface. In order to avoid these misoriented domains, process separation and proper etching pretreatment of the wafers both before and between the sputtering processes have been found to be the key strategy for achieving reproducibility and overall better material quality.
In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One consists of sharp "fjord"-shaped features in which four 90° alternated rotational variants of {111} are possible and the second one consists of islands with less defined shapes in which eight 45° alternated rotational variants can be found. Their formation occurs directly at the Ir/YSZ interface along incoherent grain boundaries, likely nucleating at local defects of the YSZ surface. In order to avoid these misoriented domains, process separation and proper etching pretreatment of the wafers both before and between the sputtering processes have been found to be the key strategy for achieving reproducibility and overall better material quality.
Author Straňák, Patrik
Graff, Andreas
Kirste, Lutz
Lebedev, Vadim
Sundarapandian, Balasubramanian
Engels, Jan
Weippert, Jürgen
Oeser, Sabine
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Cites_doi 10.1016/S0022-5096(03)00005-X
10.3390/cryst12111626
10.1063/1.5127170
10.1002/anie.201701968
10.1016/j.rinp.2023.106357
10.1016/j.diamond.2003.11.020
10.1143/JJAP.34.1942
10.1063/1.2768003
10.1016/j.commatsci.2008.01.053
10.1134/S1063784207050167
10.1380/ejssnt.2022-006
10.1016/j.tsf.2012.07.033
10.1016/S0039-6028(98)00363-X
10.1007/BF00273232
10.1103/PhysRevLett.91.056103
10.1116/1.580353
10.1007/s12274-021-4062-z
10.1080/01418619208201509
10.1116/1.5086020
10.1088/0959-5309/52/1/302
10.1111/ijac.12434
10.1016/S0040-6090(02)00761-7
10.1007/BF01590351
10.1595/147106710X493124
10.1038/srep44462
10.1021/jp803607y
10.1016/0039-6028(76)90039-X
10.1063/5.0171167
10.1103/PhysRevB.66.155429
10.1063/1.112108
10.1016/j.diamond.2016.03.018
10.1103/PhysRevB.69.094116
10.1016/j.surfcoat.2005.04.003
10.1002/er.4944
10.1103/PhysRevLett.70.2782
10.1063/1.1835002
10.1063/1.1758780
10.1063/1.1922571
10.1016/j.diamond.2005.10.041
10.1103/PhysRevLett.76.2358
10.1016/j.nimb.2018.04.002
10.1143/JJAP.44.5102
10.1088/0953-8984/15/24/306
10.1103/RevModPhys.46.129
10.1002/anie.202404775
10.1016/S1572-4859(07)80007-6
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Issue 40
Keywords microscopy
sputtering
TEM
EBSD
epitaxy
defects
Language English
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References Arblaster (cmad5e53bib31) 2010; 54
Beshenkov (cmad5e53bib15) 2012; 520
Kumar (cmad5e53bib35) 1975; 50
Sprio (cmad5e53bib10) 2006; 200
Andrade (cmad5e53bib20) 1940; 52
Bernstein (cmad5e53bib22) 2004; 69
Hemberger (cmad5e53bib27) 2016; 13
Dai (cmad5e53bib3) 2004; 13
Chen (cmad5e53bib17) 1992; 66
Fang (cmad5e53bib19) 2022; 15
Zakaria (cmad5e53bib34) 2020; 44
Müller (cmad5e53bib30) 1996; 14
Yoshikawa (cmad5e53bib7) 2019; 37
Adamesku (cmad5e53bib23) 1994; 13
Niewczas (cmad5e53bib21) 2007; vol 13
Lee (cmad5e53bib5) 2016; 66
Tadmor (cmad5e53bib24) 2003; 51
Okamoto (cmad5e53bib9) 2005; 44
He (cmad5e53bib33) 2008; 112
Guo (cmad5e53bib41) 2008; 44
Gsell (cmad5e53bib13) 2006; 15
Verstraete (cmad5e53bib1) 2005; 86
Chen (cmad5e53bib45) 2024; 63
Vargas (cmad5e53bib16) 1994; 65
Happo (cmad5e53bib32) 2022; 20
Schreck (cmad5e53bib4) 2017; 7
Busse (cmad5e53bib18) 2003; 91
Müller (cmad5e53bib29) 1996; 76
Eisenberg (cmad5e53bib40) 2002; 66
Horita (cmad5e53bib8) 1995; 34
Tersoff (cmad5e53bib43) 1993; 70
Grussendorff (cmad5e53bib25) 2003; 15
Güttler (cmad5e53bib28) 2004; 85
Khoa (cmad5e53bib14) 2002; 419
Gsell (cmad5e53bib6) 2004; 84
Gemmell (cmad5e53bib38) 1974; 46
Rhee (cmad5e53bib42) 2017; 56
Kucharczyk (cmad5e53bib37) 2018; 426
Lebedev (cmad5e53bib2) 2020; 127
Gsell (cmad5e53bib12) 2007; 91
Sundarapandian (cmad5e53bib46) 2023; 134
Vitos (cmad5e53bib36) 1998; 411
Zhou (cmad5e53bib44) 2023; 47
Kossel (cmad5e53bib39) 1938; 26
Beshenkov (cmad5e53bib11) 2007; 52
Weippert (cmad5e53bib26) 2022; 12
References_xml – volume: 51
  start-page: 765
  year: 2003
  ident: cmad5e53bib24
  publication-title: J. Mech. Phys. Solids
  doi: 10.1016/S0022-5096(03)00005-X
  contributor:
    fullname: Tadmor
– volume: 12
  start-page: 1626
  year: 2022
  ident: cmad5e53bib26
  publication-title: Crystals
  doi: 10.3390/cryst12111626
  contributor:
    fullname: Weippert
– volume: 127
  year: 2020
  ident: cmad5e53bib2
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.5127170
  contributor:
    fullname: Lebedev
– volume: 56
  start-page: 6523
  year: 2017
  ident: cmad5e53bib42
  publication-title: Angew. Chem., Int. Ed.
  doi: 10.1002/anie.201701968
  contributor:
    fullname: Rhee
– volume: 47
  year: 2023
  ident: cmad5e53bib44
  publication-title: Results Phys.
  doi: 10.1016/j.rinp.2023.106357
  contributor:
    fullname: Zhou
– volume: 13
  start-page: 552
  year: 2004
  ident: cmad5e53bib3
  publication-title: Diam. Relat. Mater.
  doi: 10.1016/j.diamond.2003.11.020
  contributor:
    fullname: Dai
– volume: 34
  start-page: 1942
  year: 1995
  ident: cmad5e53bib8
  publication-title: Japan. J. Appl. Phys.
  doi: 10.1143/JJAP.34.1942
  contributor:
    fullname: Horita
– volume: 91
  start-page: 1
  year: 2007
  ident: cmad5e53bib12
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2768003
  contributor:
    fullname: Gsell
– volume: 44
  start-page: 174
  year: 2008
  ident: cmad5e53bib41
  publication-title: Comput. Mater. Sci.
  doi: 10.1016/j.commatsci.2008.01.053
  contributor:
    fullname: Guo
– volume: 52
  start-page: 636
  year: 2007
  ident: cmad5e53bib11
  publication-title: Tech. Phys.
  doi: 10.1134/S1063784207050167
  contributor:
    fullname: Beshenkov
– volume: 20
  start-page: 51
  year: 2022
  ident: cmad5e53bib32
  publication-title: e-J. Surf. Sci. Nanotechnol.
  doi: 10.1380/ejssnt.2022-006
  contributor:
    fullname: Happo
– volume: 520
  start-page: 6888
  year: 2012
  ident: cmad5e53bib15
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2012.07.033
  contributor:
    fullname: Beshenkov
– volume: 411
  start-page: 186
  year: 1998
  ident: cmad5e53bib36
  publication-title: Surf. Sci.
  doi: 10.1016/S0039-6028(98)00363-X
  contributor:
    fullname: Vitos
– volume: 13
  start-page: 865
  year: 1994
  ident: cmad5e53bib23
  publication-title: J. Mater. Sci. Lett.
  doi: 10.1007/BF00273232
  contributor:
    fullname: Adamesku
– volume: 91
  year: 2003
  ident: cmad5e53bib18
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.91.056103
  contributor:
    fullname: Busse
– volume: 14
  start-page: 1878
  year: 1996
  ident: cmad5e53bib30
  publication-title: J. Vac. Sci. Technol. A
  doi: 10.1116/1.580353
  contributor:
    fullname: Müller
– volume: 15
  start-page: 3933
  year: 2022
  ident: cmad5e53bib19
  publication-title: Nano Res.
  doi: 10.1007/s12274-021-4062-z
  contributor:
    fullname: Fang
– volume: 66
  start-page: 1
  year: 1992
  ident: cmad5e53bib17
  publication-title: Phil. Mag. A
  doi: 10.1080/01418619208201509
  contributor:
    fullname: Chen
– volume: 37
  year: 2019
  ident: cmad5e53bib7
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.5086020
  contributor:
    fullname: Yoshikawa
– volume: 52
  start-page: 1
  year: 1940
  ident: cmad5e53bib20
  publication-title: Proc. Phys. Soc.
  doi: 10.1088/0959-5309/52/1/302
  contributor:
    fullname: Andrade
– volume: 13
  start-page: 116
  year: 2016
  ident: cmad5e53bib27
  publication-title: Int. J. Appl. Ceram. Technol.
  doi: 10.1111/ijac.12434
  contributor:
    fullname: Hemberger
– volume: 419
  start-page: 88
  year: 2002
  ident: cmad5e53bib14
  publication-title: Thin Solid Films
  doi: 10.1016/S0040-6090(02)00761-7
  contributor:
    fullname: Khoa
– volume: 26
  start-page: 660
  year: 1938
  ident: cmad5e53bib39
  publication-title: Naturwissenschaften
  doi: 10.1007/BF01590351
  contributor:
    fullname: Kossel
– volume: 54
  start-page: 93
  year: 2010
  ident: cmad5e53bib31
  publication-title: Platinum Met. Rev.
  doi: 10.1595/147106710X493124
  contributor:
    fullname: Arblaster
– volume: 7
  year: 2017
  ident: cmad5e53bib4
  publication-title: Sci. Rep.
  doi: 10.1038/srep44462
  contributor:
    fullname: Schreck
– volume: 112
  start-page: 11946
  year: 2008
  ident: cmad5e53bib33
  publication-title: J. Phys. Chem. C
  doi: 10.1021/jp803607y
  contributor:
    fullname: He
– volume: 50
  start-page: 399
  year: 1975
  ident: cmad5e53bib35
  publication-title: Surf. Sci.
  doi: 10.1016/0039-6028(76)90039-X
  contributor:
    fullname: Kumar
– volume: 134
  year: 2023
  ident: cmad5e53bib46
  publication-title: J. Appl. Phys.
  doi: 10.1063/5.0171167
  contributor:
    fullname: Sundarapandian
– volume: 66
  year: 2002
  ident: cmad5e53bib40
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.66.155429
  contributor:
    fullname: Eisenberg
– volume: 65
  start-page: 1094
  year: 1994
  ident: cmad5e53bib16
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.112108
  contributor:
    fullname: Vargas
– volume: 66
  start-page: 67
  year: 2016
  ident: cmad5e53bib5
  publication-title: Diam. Relat. Mater.
  doi: 10.1016/j.diamond.2016.03.018
  contributor:
    fullname: Lee
– volume: 69
  year: 2004
  ident: cmad5e53bib22
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.69.094116
  contributor:
    fullname: Bernstein
– volume: 200
  start-page: 4579
  year: 2006
  ident: cmad5e53bib10
  publication-title: Surf. Coat. Technol.
  doi: 10.1016/j.surfcoat.2005.04.003
  contributor:
    fullname: Sprio
– volume: 44
  start-page: 631
  year: 2020
  ident: cmad5e53bib34
  publication-title: Int. J. Energy Res.
  doi: 10.1002/er.4944
  contributor:
    fullname: Zakaria
– volume: 70
  start-page: 2782
  year: 1993
  ident: cmad5e53bib43
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.70.2782
  contributor:
    fullname: Tersoff
– volume: 85
  start-page: 6134
  year: 2004
  ident: cmad5e53bib28
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1835002
  contributor:
    fullname: Güttler
– volume: 84
  start-page: 4541
  year: 2004
  ident: cmad5e53bib6
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1758780
  contributor:
    fullname: Gsell
– volume: 86
  year: 2005
  ident: cmad5e53bib1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1922571
  contributor:
    fullname: Verstraete
– volume: 15
  start-page: 479
  year: 2006
  ident: cmad5e53bib13
  publication-title: Diam. Relat. Mater.
  doi: 10.1016/j.diamond.2005.10.041
  contributor:
    fullname: Gsell
– volume: 76
  start-page: 2358
  year: 1996
  ident: cmad5e53bib29
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.76.2358
  contributor:
    fullname: Müller
– volume: 426
  start-page: 5
  year: 2018
  ident: cmad5e53bib37
  publication-title: Nucl. Instrum. Methods Phys. Res. B
  doi: 10.1016/j.nimb.2018.04.002
  contributor:
    fullname: Kucharczyk
– volume: 44
  start-page: 5102
  year: 2005
  ident: cmad5e53bib9
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.44.5102
  contributor:
    fullname: Okamoto
– volume: 15
  start-page: 4127
  year: 2003
  ident: cmad5e53bib25
  publication-title: J. Phys.: Condens. Matter
  doi: 10.1088/0953-8984/15/24/306
  contributor:
    fullname: Grussendorff
– volume: 46
  start-page: 129
  year: 1974
  ident: cmad5e53bib38
  publication-title: Rev. Mod. Phys.
  doi: 10.1103/RevModPhys.46.129
  contributor:
    fullname: Gemmell
– volume: 63
  year: 2024
  ident: cmad5e53bib45
  publication-title: Angew. Chem., Int. Ed.
  doi: 10.1002/anie.202404775
  contributor:
    fullname: Chen
– volume: vol 13
  start-page: 263
  year: 2007
  ident: cmad5e53bib21
  article-title: Dislocations and twinning in face centred cubic crystals
  doi: 10.1016/S1572-4859(07)80007-6
  contributor:
    fullname: Niewczas
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Snippet In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are observed. One...
Abstract In the wafer-scale growth of Ir(001) on yttria-stabilized zirconia (YSZ) by magnetron sputtering epitaxy two kinds of {111} oriented domains are...
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iop
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SubjectTerms defects
EBSD
epitaxy
microscopy
sputtering
TEM
Title Formation of {111} oriented domains during the sputtering epitaxy growth of (001) oriented Iridium films
URI https://iopscience.iop.org/article/10.1088/1361-648X/ad5e53
https://www.ncbi.nlm.nih.gov/pubmed/38955334
https://www.proquest.com/docview/3075374770/abstract/
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