A 5.9 mW E-/W-Band SiGe-HBT LNA With 48 GHz 3-dB Bandwidth and 4.5-dB Noise Figure

• Published in: IEEE microwave and wireless components letters Vol. 32; no. 12; pp. 1451 - 1454
• Main Authors: Vardarli, Eren, Sakalas, Paulius, Schroter, Michael
• Format: Journal Article
• Language: English
• Published: IEEE 01.12.2022
• Subjects: 3-dB bandwidth; E-band; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Impedance matching; low noise amplifier (LNA); low-voltage operation; millimeter-wave (mm-wave) circuit design; noise figure (NF); Noise measurement; silicon-germanium (SiGe)-heterojunction bipolar transistor (HBT); Transmission line measurements; W-band; Wideband

The theory, design, and implementation of a millimeter-wave (mm-wave) two-stage common-emitter (CE) low noise amplifier (LNA) using a 130-nm silicon-germanium (SiGe):C Bipolar CMOS technology is presented. The LNA was optimized for wideband performance from 62 to 110 GHz for both mm-wave radar/sensi...