A 10-W High-Power Amplifier Using Input Nonlinearity for K-Band Satcom Applications

• Published in: IEEE microwave and wireless components letters Vol. 32; no. 7; pp. 1 - 4
• Main Authors: Yi, Chupeng, Lu, Yang, Zhao, Ziyue, Wang, Yuchen, Zhou, Jiuding, Zhao, Bochao, Li, Peixian, Ma, Xiaohua, Hao, Yue
• Format: Journal Article
• Language: English
• Published: IEEE 01.07.2022
• Subjects: GaN monolithic microwave-integrated circuit (MMIC); Harmonic analysis; high-power amplifier (HPA); Impedance; input harmonic impedance (ZnS); input nonlinearity; interstage matching network (ISMN); K-band; Power measurement; Power system harmonics; Silicon; Transistors

This letter presents a K-band 0.1-μm GaN on Si 10-W high-power amplifier (HPA) for the downlink of the satellite communication system. The proposed HPA uses the driver-stage transistor to generate a half-sinusoidal waveform that is delivered to the power-stage transistor. The half-sinusoidal wavefor...