A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications
Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by SiC successfully. This article presents a thorough review of develo...
Saved in:
| Published in | IEEE transactions on power electronics Vol. 36; no. 2; pp. 2080 - 2093 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.02.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by SiC successfully. This article presents a thorough review of development of SiC IGBT in the past 30 years. The progresses of models, structure design, and performance in SiC IGBT are summarized. The challenges resulting from fabrication process and switching characteristics are discussed and analyzed in detail. The experimental results and existing problems in SiC IGBT-based applications are summarized in the end. |
|---|---|
| AbstractList | Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by SiC successfully. This article presents a thorough review of development of SiC IGBT in the past 30 years. The progresses of models, structure design, and performance in SiC IGBT are summarized. The challenges resulting from fabrication process and switching characteristics are discussed and analyzed in detail. The experimental results and existing problems in SiC IGBT-based applications are summarized in the end. |
| Author | Qiu, Yufeng Kang, Yong Liang, Lin Han, Lubin |
| Author_xml | – sequence: 1 givenname: Lubin surname: Han fullname: Han, Lubin email: han_lubin@hust.edu.cn organization: School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China – sequence: 2 givenname: Lin orcidid: 0000-0002-0006-1183 surname: Liang fullname: Liang, Lin email: lianglin@hust.edu.cn organization: School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China – sequence: 3 givenname: Yong surname: Kang fullname: Kang, Yong email: ykang@hust.edu.cn organization: School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China – sequence: 4 givenname: Yufeng surname: Qiu fullname: Qiu, Yufeng email: qiuyufeng@geiri.sgcc.com.cn organization: Global Energy Interconnection Research Institute, Beijing, China |
| BookMark | eNo9kNFKwzAUhoNMcJs-gHhT8NbOc5K0SbybZZuDDUXndUnaFDNmW5NO8e3tmHp1-A_ffw58IzKom9oScokwQQR1u3marSYUKEwYQKI4nJAhKo4xIIgBGYKUSSyVYmdkFMIWAHkCOCTrafRsP539ipoqenFZtFzcb-6idVPaXbiJ5tp4V-jONXWfsjftddFZ70Lnin6h6zKatu3uDzknp5XeBXvxO8fkdT7bZA_x6nGxzKaruKCKdTFDIYAbxq2UwiQchdKVLIywDFmaGlNIzipZJqVJbUpTyi03VGpIqspopGxMro93W9987G3o8m2z93X_MqeciyRB5KKn8EgVvgnB2ypvvXvX_jtHyA_W8oO1_GAt_7XWd66OHWet_ecVMsAU2Q_0yWf8 |
| CODEN | ITPEE8 |
| CitedBy_id | crossref_primary_10_3390_mi13020313 crossref_primary_10_1016_j_compositesb_2022_110107 crossref_primary_10_1016_j_microrel_2022_114545 crossref_primary_10_1109_ACCESS_2022_3203848 crossref_primary_10_1063_5_0085510 crossref_primary_10_1109_OJPEL_2023_3297449 crossref_primary_10_1109_TDEI_2022_3211225 crossref_primary_10_4028_p_b1gfac crossref_primary_10_3390_ma15248751 crossref_primary_10_1049_pel2_12679 crossref_primary_10_1109_TCPMT_2021_3110997 crossref_primary_10_1002_smtd_202200329 crossref_primary_10_1109_TED_2022_3175946 crossref_primary_10_1016_j_epsr_2023_109220 crossref_primary_10_1109_TPEL_2022_3205598 crossref_primary_10_3390_fractalfract7080614 crossref_primary_10_1088_1361_6641_ad4739 crossref_primary_10_3390_mi13050734 crossref_primary_10_35848_1347_4065_ac552f crossref_primary_10_1016_j_matdes_2023_112220 crossref_primary_10_1103_PhysRevB_107_235203 crossref_primary_10_1016_j_mssp_2024_108369 crossref_primary_10_1109_TCSII_2023_3275977 crossref_primary_10_3390_mi13040554 crossref_primary_10_1109_TPEL_2021_3092431 crossref_primary_10_3390_en14061568 crossref_primary_10_35848_1347_4065_ad40eb crossref_primary_10_2139_ssrn_4166709 crossref_primary_10_1063_5_0150344 crossref_primary_10_1007_s43236_023_00726_9 crossref_primary_10_1016_j_pedc_2022_100019 crossref_primary_10_1016_j_matlet_2022_131884 crossref_primary_10_1109_TPEL_2024_3391875 crossref_primary_10_1007_s11664_023_10822_y crossref_primary_10_1016_j_mejo_2024_106187 crossref_primary_10_1088_1674_1056_ac8722 crossref_primary_10_1109_OJIES_2022_3220248 crossref_primary_10_1016_j_engfailanal_2023_107625 crossref_primary_10_1109_ACCESS_2022_3156277 crossref_primary_10_1016_j_ultsonch_2023_106438 crossref_primary_10_1049_pel2_12290 crossref_primary_10_3390_en16083583 crossref_primary_10_1016_j_precisioneng_2024_04_002 crossref_primary_10_1186_s11671_022_03672_w crossref_primary_10_1587_elex_20_20230275 crossref_primary_10_1016_j_ceramint_2022_10_193 crossref_primary_10_1016_j_sse_2024_108907 crossref_primary_10_3390_en16093901 crossref_primary_10_1016_j_ceramint_2024_03_120 crossref_primary_10_1016_j_jcrysgro_2022_126586 crossref_primary_10_1111_jace_18062 crossref_primary_10_3390_electronics12112501 crossref_primary_10_1016_j_ceramint_2024_06_216 crossref_primary_10_1007_s00706_024_03212_5 crossref_primary_10_1109_TDEI_2023_3239035 crossref_primary_10_35848_1347_4065_ac6215 crossref_primary_10_1109_TED_2024_3365772 crossref_primary_10_3390_mi14112045 crossref_primary_10_1109_TED_2021_3083239 crossref_primary_10_1039_D2CE00612J crossref_primary_10_1007_s11664_023_10786_z crossref_primary_10_1016_j_surfcoat_2022_128692 crossref_primary_10_3390_inventions8030072 crossref_primary_10_1016_j_mtcomm_2024_108369 crossref_primary_10_3390_su15086413 crossref_primary_10_1016_j_ceramint_2022_11_257 crossref_primary_10_1109_TED_2022_3183555 crossref_primary_10_1109_TDEI_2021_009507 |
| Cites_doi | 10.1109/APEC.2016.7468085 10.1109/ECCE.2015.7310462 10.7567/JJAP.55.04ER12 10.4028/www.scientific.net/MSF.897.571 10.1109/TED.2017.2755719 10.4028/www.scientific.net/MSF.717-720.279 10.1109/ECCE.2014.6953430 10.4028/www.scientific.net/MSF.600-603.333 10.1109/SMICND.2005.1558801 10.1109/APEC.2016.7468153 10.1109/DRC.1996.546313 10.1109/63.892840 10.1109/TED.2009.2037379 10.4028/www.scientific.net/MSF.778-780.151 10.1109/TED.2012.2220969 10.1109/ECCE.2016.7855343 10.1088/0268-1242/30/8/084001 10.1109/ECCE.2013.6647331 10.1109/IFWS.2016.7803742 10.1109/WiPDA.2013.6695559 10.1109/TIA.2015.2394294 10.1109/WiPDA.2013.6695557 10.1109/TPEL.2018.2870084 10.1109/TPEL.2018.2889263 10.1109/PPC.2015.7297038 10.1109/ECCE.2014.6953698 10.1109/ECCE.2015.7310594 10.4028/www.scientific.net/MSF.645-648.211 10.1109/ISPSD.2018.8393690 10.1109/ECCE.2013.6647132 10.1109/TED.2016.2631241 10.1109/TED.2016.2639548 10.1109/PPC.2017.8291248 10.1063/1.2949081 10.1109/ISPSD.2014.6855980 10.1109/ECCE.2015.7309787 10.1109/ISPSD.2014.6856030 10.1109/ISPSD.2014.6856026 10.1016/j.sse.2018.12.019 10.1016/j.diamond.2018.12.008 10.1109/ISPSD.2002.1016166 10.1109/IPMHVC.2016.8012883 10.1109/APEC.2015.7104530 10.1002/pssa.201200567 10.4028/www.scientific.net/MSF.954.35 10.1016/0038-1101(88)90025-1 10.1109/ISPSD.2014.6856048 10.1109/ECCE.2013.6647027 10.1109/ECCE.2012.6342311 10.1109/APEC.2016.7467976 10.1109/APEC.2014.6803505 10.1109/ISPSD.2015.7123431 10.1109/TIA.2018.2824247 10.1109/ISPSD.2014.6856050 10.1109/ECCE.2012.6342807 10.1109/EPEPEMC.2016.7752121 10.1109/ECCE.2016.7854936 10.4028/www.scientific.net/MSF.963.647 10.1109/ICSICT.2018.8565661 10.4028/www.scientific.net/MSF.897.379 10.4028/www.scientific.net/MSF.740-742.633 10.4028/www.scientific.net/MSF.778-780.135 10.4028/www.scientific.net/MSF.740-742.181 10.1109/TIA.2015.2412096 10.4028/www.scientific.net/MSF.963.660 10.1109/APEC.2013.6520208 10.1109/APEC.2012.6166055 10.1109/LED.2016.2521164 10.1109/TED.2012.2226182 10.1109/ISPSD.2016.7520818 10.1063/1.4793504 10.1109/SMICND.2018.8539824 10.1109/IPEC.2014.6870034 |
| ContentType | Journal Article |
| Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021 |
| Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021 |
| DBID | 97E RIA RIE AAYXX CITATION 7SP 7TB 8FD FR3 JQ2 KR7 L7M |
| DOI | 10.1109/TPEL.2020.3005940 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library Online CrossRef Electronics & Communications Abstracts Mechanical & Transportation Engineering Abstracts Technology Research Database Engineering Research Database ProQuest Computer Science Collection Civil Engineering Abstracts Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Civil Engineering Abstracts Technology Research Database Mechanical & Transportation Engineering Abstracts Electronics & Communications Abstracts ProQuest Computer Science Collection Engineering Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Civil Engineering Abstracts |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE/IET Electronic Library (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1941-0107 |
| EndPage | 2093 |
| ExternalDocumentID | 10_1109_TPEL_2020_3005940 9130161 |
| Genre | orig-research |
| GrantInformation_xml | – fundername: National Key R&D Program of China grantid: 2018YFB0905700; 2018YFB0905705 |
| GroupedDBID | -~X 0R~ 29I 3EH 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABFSI ABQJQ ABVLG ACGFO ACGFS ACIWK ACKIV AENEX AETIX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV BEFXN BFFAM BGNUA BKEBE BKOMP BPEOZ CS3 DU5 E.L EBS EJD HZ~ H~9 ICLAB IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P PQQKQ RIA RIE RIG RNS RXW TAE TAF TN5 VH1 VJK XFK AAYXX CITATION 7SP 7TB 8FD FR3 JQ2 KR7 L7M |
| ID | FETCH-LOGICAL-c293t-317704b34e887b54179af8cb7e31366bbc843f8d5db6e62624e4b28a05ffba123 |
| IEDL.DBID | RIE |
| ISSN | 0885-8993 |
| IngestDate | Thu Oct 10 16:20:38 EDT 2024 Fri Aug 23 03:11:07 EDT 2024 Wed Jun 26 19:26:49 EDT 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 2 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c293t-317704b34e887b54179af8cb7e31366bbc843f8d5db6e62624e4b28a05ffba123 |
| ORCID | 0000-0002-0006-1183 |
| PQID | 2447551147 |
| PQPubID | 37080 |
| PageCount | 14 |
| ParticipantIDs | crossref_primary_10_1109_TPEL_2020_3005940 ieee_primary_9130161 proquest_journals_2447551147 |
| PublicationCentury | 2000 |
| PublicationDate | 2021-02-01 |
| PublicationDateYYYYMMDD | 2021-02-01 |
| PublicationDate_xml | – month: 02 year: 2021 text: 2021-02-01 day: 01 |
| PublicationDecade | 2020 |
| PublicationPlace | New York |
| PublicationPlace_xml | – name: New York |
| PublicationTitle | IEEE transactions on power electronics |
| PublicationTitleAbbrev | TPEL |
| PublicationYear | 2021 |
| Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| References | ref57 ref13 ref56 ref12 ref15 ref58 ref14 ref53 ref55 ref11 ref54 ref10 yang (ref50) 0 ref17 ref16 ref19 tripathi (ref75) 0 ref51 ref46 ref45 ref48 ref86 ref42 ref85 ref41 ref44 ref43 ref49 ref8 ref7 ref4 ref3 ref5 ref81 ref40 ref84 ueno (ref18) 0 ref83 ref80 moghaddam (ref82) 0 ref35 ref78 ref34 ref37 zhang (ref6) 0 ref36 ref31 ref74 ref30 ref77 ref33 yonezawa (ref26) 0 ref2 ref1 ref39 ref38 ref71 brunt1 (ref9) 2015; 821?823 ref70 ref73 hinojosa (ref47) 0 ref72 vechalapu (ref76) 0 hatua (ref79) 0 ref68 ref24 ref67 ref23 lee (ref22) 0 ref69 ref25 ref64 ref20 ref63 ref66 ref65 ref21 ref28 ref27 (ref32) 0 sung (ref59) 0 ref29 ref60 ref62 koseki (ref52) 0; 54 ref61 |
| References_xml | – ident: ref70 doi: 10.1109/APEC.2016.7468085 – ident: ref12 doi: 10.1109/ECCE.2015.7310462 – ident: ref40 doi: 10.7567/JJAP.55.04ER12 – ident: ref41 doi: 10.4028/www.scientific.net/MSF.897.571 – ident: ref57 doi: 10.1109/TED.2017.2755719 – ident: ref34 doi: 10.4028/www.scientific.net/MSF.717-720.279 – ident: ref21 doi: 10.1109/ECCE.2014.6953430 – ident: ref30 doi: 10.4028/www.scientific.net/MSF.600-603.333 – ident: ref7 doi: 10.1109/SMICND.2005.1558801 – ident: ref72 doi: 10.1109/APEC.2016.7468153 – ident: ref5 doi: 10.1109/DRC.1996.546313 – year: 0 ident: ref32 – ident: ref15 doi: 10.1109/63.892840 – start-page: 261 year: 0 ident: ref18 article-title: Specific features of SiC-IGBT with 13 kV switching publication-title: Proc Int Symp Power Semicond Devices ICs contributor: fullname: ueno – ident: ref8 doi: 10.1109/TED.2009.2037379 – ident: ref27 doi: 10.4028/www.scientific.net/MSF.778-780.151 – ident: ref54 doi: 10.1109/TED.2012.2220969 – start-page: 281 year: 0 ident: ref6 article-title: New improvement results on 7.5 kV 4H-SiC p-IGBTs with Rdiff,on of 26 m?·cm2 at 25 °C publication-title: Proc IEEE Int Symp Power Semicond Devices ICs contributor: fullname: zhang – ident: ref78 doi: 10.1109/ECCE.2016.7855343 – ident: ref68 doi: 10.1088/0268-1242/30/8/084001 – ident: ref81 doi: 10.1109/ECCE.2013.6647331 – ident: ref61 doi: 10.1109/IFWS.2016.7803742 – ident: ref58 doi: 10.1109/WiPDA.2013.6695559 – ident: ref84 doi: 10.1109/TIA.2015.2394294 – ident: ref46 doi: 10.1109/WiPDA.2013.6695557 – ident: ref73 doi: 10.1109/TPEL.2018.2870084 – start-page: 4151 year: 0 ident: ref76 article-title: Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications publication-title: Proc IEEE Energy Convers Congr Expo contributor: fullname: vechalapu – ident: ref23 doi: 10.1109/TPEL.2018.2889263 – ident: ref14 doi: 10.1109/PPC.2015.7297038 – ident: ref67 doi: 10.1109/ECCE.2014.6953698 – start-page: 2180 year: 0 ident: ref82 article-title: Thermal design considerations for 12 kV SiC n-IGBT based 3L NPC converter publication-title: Proc IEEE Energy Convers Congr Expo contributor: fullname: moghaddam – ident: ref80 doi: 10.1109/ECCE.2015.7310594 – ident: ref37 doi: 10.4028/www.scientific.net/MSF.645-648.211 – ident: ref55 doi: 10.1109/ISPSD.2018.8393690 – ident: ref83 doi: 10.1109/ECCE.2013.6647132 – ident: ref63 doi: 10.1109/TED.2016.2631241 – start-page: 6.6.1 year: 0 ident: ref26 article-title: Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT publication-title: Proc IEEE Int Electron Devices Meeting contributor: fullname: yonezawa – ident: ref56 doi: 10.1109/TED.2016.2639548 – volume: 821?823 start-page: 847 year: 2015 ident: ref9 article-title: 27 kV, 20 A 4H-SiC n-IGBTs publication-title: Mater Sci Forum contributor: fullname: brunt1 – ident: ref85 doi: 10.1109/PPC.2017.8291248 – ident: ref38 doi: 10.1063/1.2949081 – ident: ref64 doi: 10.1109/ISPSD.2014.6855980 – ident: ref65 doi: 10.1109/ECCE.2015.7309787 – start-page: 19 year: 0 ident: ref50 article-title: Simulation and optimization of field limiting rings for ultrahigh voltage 4H-SiC IGBT publication-title: Proc 13th China Int Forum Solid State Lighting Int Forum Wide Bandgap Semicond China contributor: fullname: yang – ident: ref49 doi: 10.1109/ISPSD.2014.6856030 – ident: ref44 doi: 10.1109/ISPSD.2014.6856026 – ident: ref19 doi: 10.1016/j.sse.2018.12.019 – start-page: 5708 year: 0 ident: ref75 article-title: MVDC microgrids enabled by 15 kV SiC IGBT based flexible three phase dual active bridge isolated DC-DC converter publication-title: Proc IEEE Energy Convers Congr Expo contributor: fullname: tripathi – ident: ref36 doi: 10.1016/j.diamond.2018.12.008 – ident: ref3 doi: 10.1109/ISPSD.2002.1016166 – ident: ref86 doi: 10.1109/IPMHVC.2016.8012883 – start-page: 101 year: 0 ident: ref47 article-title: Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors publication-title: Proc IEEE Int Power Modulator High Voltage Conf contributor: fullname: hinojosa – ident: ref2 doi: 10.1109/APEC.2015.7104530 – ident: ref39 doi: 10.1002/pssa.201200567 – ident: ref31 doi: 10.4028/www.scientific.net/MSF.954.35 – ident: ref16 doi: 10.1016/0038-1101(88)90025-1 – ident: ref66 doi: 10.1109/ISPSD.2014.6856048 – ident: ref11 doi: 10.1109/ECCE.2013.6647027 – ident: ref45 doi: 10.1109/ECCE.2012.6342311 – ident: ref74 doi: 10.1109/APEC.2016.7467976 – ident: ref69 doi: 10.1109/APEC.2014.6803505 – ident: ref4 doi: 10.1109/ISPSD.2015.7123431 – volume: 54 start-page: 3558 year: 0 ident: ref52 article-title: Dynamic behavior of a medium-voltage N-channel SiC-IGBT with ultra-fast switching performance of 300 kV/?s publication-title: IEEE Trans Ind Appl doi: 10.1109/TIA.2018.2824247 contributor: fullname: koseki – ident: ref48 doi: 10.1109/ISPSD.2014.6856050 – ident: ref10 doi: 10.1109/ECCE.2012.6342807 – ident: ref71 doi: 10.1109/EPEPEMC.2016.7752121 – ident: ref77 doi: 10.1109/ECCE.2016.7854936 – start-page: 217 year: 0 ident: ref59 article-title: A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop publication-title: Proc IEEE Int Symp Power Semicond Devices ICs contributor: fullname: sung – ident: ref42 doi: 10.4028/www.scientific.net/MSF.963.647 – ident: ref51 doi: 10.1109/ICSICT.2018.8565661 – start-page: 4225 year: 0 ident: ref79 article-title: Transformer less intelligent power substation design with 15 kV SiC IGBT for grid interconnection publication-title: Proc IEEE Energy Convers Congr Expo contributor: fullname: hatua – ident: ref28 doi: 10.4028/www.scientific.net/MSF.897.379 – ident: ref35 doi: 10.4028/www.scientific.net/MSF.740-742.633 – ident: ref29 doi: 10.4028/www.scientific.net/MSF.778-780.135 – ident: ref24 doi: 10.4028/www.scientific.net/MSF.740-742.181 – ident: ref13 doi: 10.1109/TIA.2015.2412096 – ident: ref62 doi: 10.4028/www.scientific.net/MSF.963.660 – ident: ref20 doi: 10.1109/APEC.2013.6520208 – ident: ref1 doi: 10.1109/APEC.2012.6166055 – ident: ref25 doi: 10.1109/LED.2016.2521164 – ident: ref17 doi: 10.1109/TED.2012.2226182 – ident: ref43 doi: 10.1109/ISPSD.2016.7520818 – ident: ref33 doi: 10.1063/1.4793504 – ident: ref60 doi: 10.1109/SMICND.2018.8539824 – start-page: 1051 year: 0 ident: ref22 article-title: 4H-SiC 15 kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab publication-title: Proc IEEE Appl Power Electron Conf Expo contributor: fullname: lee – ident: ref53 doi: 10.1109/IPEC.2014.6870034 |
| SSID | ssj0014501 |
| Score | 2.6423085 |
| Snippet | Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor... |
| SourceID | proquest crossref ieee |
| SourceType | Aggregation Database Publisher |
| StartPage | 2080 |
| SubjectTerms | Applications characteristics device models Electronic devices insulated gate bipolar transistor (IGBT) Insulated gate bipolar transistors Integrated circuit modeling Mathematical model Numerical models Predictive models review Semiconductor devices Silicon Silicon carbide structure designs Wide bandgap semiconductors |
| Title | A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications |
| URI | https://ieeexplore.ieee.org/document/9130161 https://www.proquest.com/docview/2447551147 |
| Volume | 36 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV09T8MwELVKJxj4KohCQR6YUNK6sR0nbKVqKYgiJFqpWxQntoRAKWrThV_P2UmqFhjYMjiSdee7d893vkPo2qdEp5xol3gKCIoQyo1ZKlwD_r6UcKjsmM7xsz-asscZn9WQs34Lo5SyxWeqbT5tLj-dJytzVdYJweF2DdfZEWFYvNVaZwwYt6OOwWi4CxyClhnMLgk7k5fBEzBBDwiqbU9CtjDIDlX55YktvAwP0LjaWFFV8t5e5bKdfP3o2fjfnR-i_TLOxL3iYByhmsqO0d5G98EGGvdwkRnAc41f3_r44f5ucovNdLSPpYOHsVxUF3oO7m83dnZwnKW4t5H9PkHT4WDSH7nldAU3AYjPwfkKQZikTIGfkdxMIot1kEihaJcaPSUBozpIeSp9BbTHY4pJL4gJ11rGAHinqJ7NM3WGcAqGLSWVHtUAiloBp-syTQH2eJIkgjfRTSXv6LNoohFZ8kHCyCgnMsqJSuU0UcPIb72wFF0TtSoNRaWZLSPPtCuEkJGJ87__ukC7nilCsWXWLVTPFyt1CVFELq_s8fkGNirAog |
| link.rule.ids | 315,783,787,799,27936,27937,55086 |
| linkProvider | IEEE |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8JAEJ4QPKgHX2hEUffgybRQurtt8YYEBKXEREi4Nd12NzEaMDwu_npnt4WAevDWwzbZzOzMN9_O7AzArUcdlXJH2Y4rkaD4vrRjlvq2Bn9PCDxUZkxnOPC6I_Y05uMCWOu3MFJKU3wmq_rT5PLTabLUV2W1BjrcuuY6OxhXB172WmudM2DcDDtGs-E2sgia5zDrTqM2fGn3kQu6SFFNgxJnC4XMWJVfvtgATOcQwtXWsrqS9-pyIarJ14-ujf_d-xEc5JEmaWZH4xgKcnIC-xv9B0sQNkmWGyBTRV7fWqT3-DC8J3o-2sfcIp1YzFZXehZpbbd2tkg8SUlzI_99CqNOe9jq2vl8BTtBkF-g-_V9hwnKJHoawfUsslgFifAlrVOtqSRgVAUpT4Unkfi4TDLhBrHDlRIxQt4ZFCfTiTwHkqJpC0GFSxXCopLI6upMUQQ-niSJz8twt5J39Jm10YgM_XAakVZOpJUT5copQ0nLb70wF10ZKisNRbmhzSNXNyzEoJH5F3__dQO73WHYj_q9wfMl7Lm6JMUUXVeguJgt5RXGFAtxbY7SN3i2w-0 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+Review+of+SiC+IGBT%3A+Models%2C+Fabrications%2C+Characteristics%2C+and+Applications&rft.jtitle=IEEE+transactions+on+power+electronics&rft.au=Han%2C+Lubin&rft.au=Liang%2C+Lin&rft.au=Kang%2C+Yong&rft.au=Qiu%2C+Yufeng&rft.date=2021-02-01&rft.pub=IEEE&rft.issn=0885-8993&rft.eissn=1941-0107&rft.volume=36&rft.issue=2&rft.spage=2080&rft.epage=2093&rft_id=info:doi/10.1109%2FTPEL.2020.3005940&rft.externalDocID=9130161 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0885-8993&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0885-8993&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0885-8993&client=summon |