Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure

• Published in: IEEE transactions on power electronics Vol. 32; no. 3; pp. 2189 - 2202
• Main Authors: Cucak, Dejana, Vasic, Miroslav, Garcia, Oscar, Angel Oliver, Jesus, Alou, Pedro, Antonio Cobos, Jose, Wang, Ashu, Martin-Horcajo, Sara, Romero, Maria Fatima, Calle, Fernando
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2017; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">off -state capacitance modeling; Aluminum gallium nitrides; Analytical models; Buck converters; Capacitance; Computer simulation; Current voltage characteristics; Design optimization; Design parameters; Electron mobility; Field-plate structure; Finite element method; Gallium nitride; GaN-based high-electron mobility transistors (HEMTs); HEMT design optimization; HEMTs; Iterative methods; Logic gates; Mathematical model; Mathematical models; MODFETs; Physics; physics-based model; Plates (structural members); Power loss

This paper presents an analytical model for input, output, and reverse capacitance of a normally on AlGaN/GaN high-electron mobility transistor (HEMT) with a gate field-plate structure, when the device is in the subthreshold regime. Together with the existing model for the output I-V characteristics...