A Highly Efficient 18-40 GHz Linear Power Amplifier in 40-nm GaN for mm-Wave 5G

• Published in: IEEE microwave and wireless components letters Vol. 31; no. 8; pp. 1008 - 1011
• Main Authors: Mayeda, Jill C., Lie, Donald Y. C., Lopez, Jerry
• Format: Journal Article
• Language: English
• Published: IEEE 01.08.2021
• Subjects: 5G mobile communication; 5G new radio (NR); broadband; Broadband amplifiers; FR2; Frequency measurement; Gain; GaN; Linearity; Load modeling; millimeter-wave (mm-Wave); power amplifier (PA); Radio frequency

A medium-power, highly-efficient broadband linear power amplifier (PA) is designed in a 40-nm GaN technology that covers the key 5G FR2 band of 24-40 GHz. Load-pull simulations suggest better device broadband performance and peak power-added-efficiency (PAE) around <inline-formula> <tex-mat...