A Highly Efficient 18-40 GHz Linear Power Amplifier in 40-nm GaN for mm-Wave 5G

A medium-power, highly-efficient broadband linear power amplifier (PA) is designed in a 40-nm GaN technology that covers the key 5G FR2 band of 24-40 GHz. Load-pull simulations suggest better device broadband performance and peak power-added-efficiency (PAE) around <inline-formula> <tex-mat...

Full description

Saved in:
Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 31; no. 8; pp. 1008 - 1011
Main Authors Mayeda, Jill C., Lie, Donald Y. C., Lopez, Jerry
Format Journal Article
LanguageEnglish
Published IEEE 01.08.2021
Subjects
Online AccessGet full text

Cover

Loading…
Abstract A medium-power, highly-efficient broadband linear power amplifier (PA) is designed in a 40-nm GaN technology that covers the key 5G FR2 band of 24-40 GHz. Load-pull simulations suggest better device broadband performance and peak power-added-efficiency (PAE) around <inline-formula> <tex-math notation="LaTeX">V_{\text {DD}} =4 </tex-math></inline-formula>-6 V. Measurement data corroborates the simulations and this PA achieves a small-signal 3-dB bandwidth (BW) of 18.0-40.3 GHz, with max. PAE/<inline-formula> <tex-math notation="LaTeX">P_{\text {SAT}} </tex-math></inline-formula> of 42.1%/18.6 dBm at 28 GHz, and 26.0%/17.2 dBm at 38 GHz at <inline-formula> <tex-math notation="LaTeX">V_{\text {DD}} = 4 </tex-math></inline-formula> V. When tested with a 9 MHz <inline-formula> <tex-math notation="LaTeX">\times \,\, 100 </tex-math></inline-formula> MHz 256-quadratic-amplitude modulation (QAM) 5G new radio (NR) signal, it achieves an adjacent-channel-leakage-ratio (ACLR) of −27 dBc with <inline-formula> <tex-math notation="LaTeX">P_{\text {OUT, AVG}} </tex-math></inline-formula>/PAE of 11.3 dBm/13.9% at 28 GHz. When compared with state-of-the-art broadband PAs, it achieves the best <inline-formula> <tex-math notation="LaTeX">S_{21}~3 </tex-math></inline-formula>-dB BW with excellent peak PAE and linearity. This work also reports the best PAE for broadband medium-power millimeter-wave GaN PA at <inline-formula> <tex-math notation="LaTeX">P_{\text {SAT}}~\sim 20 </tex-math></inline-formula> dBm.
AbstractList A medium-power, highly-efficient broadband linear power amplifier (PA) is designed in a 40-nm GaN technology that covers the key 5G FR2 band of 24-40 GHz. Load-pull simulations suggest better device broadband performance and peak power-added-efficiency (PAE) around <inline-formula> <tex-math notation="LaTeX">V_{\text {DD}} =4 </tex-math></inline-formula>-6 V. Measurement data corroborates the simulations and this PA achieves a small-signal 3-dB bandwidth (BW) of 18.0-40.3 GHz, with max. PAE/<inline-formula> <tex-math notation="LaTeX">P_{\text {SAT}} </tex-math></inline-formula> of 42.1%/18.6 dBm at 28 GHz, and 26.0%/17.2 dBm at 38 GHz at <inline-formula> <tex-math notation="LaTeX">V_{\text {DD}} = 4 </tex-math></inline-formula> V. When tested with a 9 MHz <inline-formula> <tex-math notation="LaTeX">\times \,\, 100 </tex-math></inline-formula> MHz 256-quadratic-amplitude modulation (QAM) 5G new radio (NR) signal, it achieves an adjacent-channel-leakage-ratio (ACLR) of −27 dBc with <inline-formula> <tex-math notation="LaTeX">P_{\text {OUT, AVG}} </tex-math></inline-formula>/PAE of 11.3 dBm/13.9% at 28 GHz. When compared with state-of-the-art broadband PAs, it achieves the best <inline-formula> <tex-math notation="LaTeX">S_{21}~3 </tex-math></inline-formula>-dB BW with excellent peak PAE and linearity. This work also reports the best PAE for broadband medium-power millimeter-wave GaN PA at <inline-formula> <tex-math notation="LaTeX">P_{\text {SAT}}~\sim 20 </tex-math></inline-formula> dBm.
Author Lie, Donald Y. C.
Lopez, Jerry
Mayeda, Jill C.
Author_xml – sequence: 1
  givenname: Jill C.
  orcidid: 0000-0002-0575-291X
  surname: Mayeda
  fullname: Mayeda, Jill C.
  email: jill.mayeda@ttu.edu
  organization: Department of Electrical Engineering, Texas Tech University System, Lubbock, TX, USA
– sequence: 2
  givenname: Donald Y. C.
  orcidid: 0000-0002-1788-8910
  surname: Lie
  fullname: Lie, Donald Y. C.
  organization: Department of Electrical and Computer Engineering, Texas Tech University System, Lubbock, TX, USA
– sequence: 3
  givenname: Jerry
  surname: Lopez
  fullname: Lopez, Jerry
  organization: Department of Electrical and Computer Engineering, Texas Tech University System, Lubbock, TX, USA
BookMark eNp9kMtKAzEYhYNUsK0-gLjJC6Tmz6WTLEupU2G0LpQuh5j5o5G5lJlBqU9vhxYXLlyds_nOgW9CRnVTIyHXwGcA3N5mD9vlTHABM8mNFgrOyBi0NgySuRoNXQIDye0FmXTdB-egjIIx2SzoOr69l3u6CiH6iHVPwTDFabr-plms0bX0qfnCli6qXRlDPLRYU8VZXdHUPdLQtLSq2NZ9ItXpJTkPruzw6pRT8nK3el6uWbZJ75eLjHlhZc_AJYW2RibzQnBAgFduE4keg9bKGF8E5GhhjuA0Kse59EILESx6421h5ZTAcde3Tde1GPJdGyvX7nPg-WAkH4zkg5H8ZOTAJH8YH3vXx6buWxfLf8mbIxkR8ffJKqW5tfIHMk5stA
CODEN IMWCBJ
CitedBy_id crossref_primary_10_3390_app142311429
crossref_primary_10_3390_electronics12020432
crossref_primary_10_1002_mop_33527
crossref_primary_10_1109_MMM_2024_3453234
crossref_primary_10_1109_TCSII_2022_3206824
crossref_primary_10_1016_j_micrna_2023_207545
crossref_primary_10_1109_TMTT_2023_3240086
crossref_primary_10_3390_s23146611
crossref_primary_10_3390_jlpea13020023
crossref_primary_10_1002_mop_70151
crossref_primary_10_1049_mia2_12221
crossref_primary_10_1109_LMWT_2023_3237627
crossref_primary_10_3390_s22187068
crossref_primary_10_1016_j_microrel_2024_115482
crossref_primary_10_1109_JMW_2022_3203396
crossref_primary_10_1016_j_mee_2025_112342
crossref_primary_10_1109_LED_2023_3294696
crossref_primary_10_3390_mi13122079
crossref_primary_10_3390_electronics11050683
crossref_primary_10_1109_LED_2023_3279375
Cites_doi 10.1109/TED.2017.2657579
10.1109/MWSYM.2019.8701005
10.23919/VLSIC.2019.8778095
10.1155/2018/6793814
10.1109/TSM.2017.2748921
10.1109/TMTT.2019.2906592
10.1109/TMTT.2020.2990638
ContentType Journal Article
DBID 97E
RIA
RIE
AAYXX
CITATION
DOI 10.1109/LMWC.2021.3085241
DatabaseName IEEE Xplore (IEEE)
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library (IEL)
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library (IEL)
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1558-1764
EndPage 1011
ExternalDocumentID 10_1109_LMWC_2021_3085241
9445099
Genre orig-research
GrantInformation_xml – fundername: Defense Advanced Research Projects Agency (DARPA)
  grantid: FA8650-19-1-7902
  funderid: 10.13039/100000185
– fundername: Air Force Research Laboratory (AFRL)
  funderid: 10.13039/100006602
GroupedDBID -~X
0R~
29I
4.4
5GY
5VS
6IK
97E
AAJGR
AARMG
AASAJ
AAWTH
ABAZT
ABQJQ
ABVLG
ACGFO
ACIWK
AENEX
AETIX
AFFNX
AGQYO
AGSQL
AHBIQ
AIBXA
AKJIK
AKQYR
ALMA_UNASSIGNED_HOLDINGS
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
DU5
EBS
EJD
F5P
HZ~
H~9
IFIPE
IPLJI
JAVBF
LAI
M43
O9-
OCL
RIA
RIE
RNS
AAYXX
CITATION
RIG
ID FETCH-LOGICAL-c293t-1a7d598376d201e11b0973ecef55488cdfe0e916e1a5e4a003c2522f9ec8c9d93
IEDL.DBID RIE
ISSN 1531-1309
IngestDate Tue Jul 01 01:00:43 EDT 2025
Thu Apr 24 23:11:14 EDT 2025
Wed Aug 27 02:39:33 EDT 2025
IsPeerReviewed true
IsScholarly true
Issue 8
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c293t-1a7d598376d201e11b0973ecef55488cdfe0e916e1a5e4a003c2522f9ec8c9d93
ORCID 0000-0002-0575-291X
0000-0002-1788-8910
PageCount 4
ParticipantIDs crossref_citationtrail_10_1109_LMWC_2021_3085241
crossref_primary_10_1109_LMWC_2021_3085241
ieee_primary_9445099
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2021-08-01
PublicationDateYYYYMMDD 2021-08-01
PublicationDate_xml – month: 08
  year: 2021
  text: 2021-08-01
  day: 01
PublicationDecade 2020
PublicationTitle IEEE microwave and wireless components letters
PublicationTitleAbbrev LMWC
PublicationYear 2021
Publisher IEEE
Publisher_xml – name: IEEE
References ref7
ref3
wang (ref4) 0
(ref6) 2021
ref11
ref10
ref5
ref2
hu (ref9) 2017
ref1
qunaj (ref8) 2019
References_xml – year: 0
  ident: ref4
  article-title: Power amplifiers performance survey 2000-present
– ident: ref3
  doi: 10.1109/TED.2017.2657579
– ident: ref11
  doi: 10.1109/MWSYM.2019.8701005
– start-page: 32
  year: 2017
  ident: ref9
  article-title: A 28 GHz/37 GHz/39 GHz multiband linear Doherty power amplifier for 5G massive MIMO applications
  publication-title: IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers
– ident: ref7
  doi: 10.23919/VLSIC.2019.8778095
– year: 2021
  ident: ref6
  publication-title: Instrument Innovations for mmWave Test
– ident: ref1
  doi: 10.1155/2018/6793814
– ident: ref5
  doi: 10.1109/TSM.2017.2748921
– ident: ref10
  doi: 10.1109/TMTT.2019.2906592
– ident: ref2
  doi: 10.1109/TMTT.2020.2990638
– start-page: 1
  year: 2019
  ident: ref8
  article-title: A compact Ka-band transformer-coupled power amplifier for 5G in 0.15 ?m GaAs
  publication-title: Proc IEEE BiCMOS Compound Semiconductor Integr Circuits Technol Symp (BCICTS)
SSID ssj0014841
Score 2.4698606
Snippet A medium-power, highly-efficient broadband linear power amplifier (PA) is designed in a 40-nm GaN technology that covers the key 5G FR2 band of 24-40 GHz....
SourceID crossref
ieee
SourceType Enrichment Source
Index Database
Publisher
StartPage 1008
SubjectTerms 5G mobile communication
5G new radio (NR)
broadband
Broadband amplifiers
FR2
Frequency measurement
Gain
GaN
Linearity
Load modeling
millimeter-wave (mm-Wave)
power amplifier (PA)
Radio frequency
Title A Highly Efficient 18-40 GHz Linear Power Amplifier in 40-nm GaN for mm-Wave 5G
URI https://ieeexplore.ieee.org/document/9445099
Volume 31
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3dS8MwED-2gaAPfmyK84s8-CR2a7Z0ax7H2Afipg-O7a206RXErRPtBPfXe0m7MkXEt1KSEnJJ7vfrXX4HcC0F2qikbxGWJYLSRtpzsqWsyHGR25H0lbnFPxq3hhNxN3NmBbjN78Igokk-w5p-NLH8cKlW-ldZXQpB_k0WoUjELb2rlUcMhCsybVRu0bksswgmt2X9fjTtEhNs8FqTAEZD8G8-aKuoivEp_QMYbUaTppK81FZJUFPrH0KN_x3uIexn4JJ10tVwBAWMy7C3JTlYhh2T8qneK_DQYTrJY_7JekZGgr7FuEtMjw2Ga0YclfYAe9RF1FhHp51H5EDZc8yEbcULNvDHjPAuWyysqf-BzBkcw6Tfe-oOray8gqXIxycW99uhI4mgtkJCAch5oKV7UGFEEMN1VRiRGQk9IvcdFD5tf9UgtBZJVK6SoWyeQClexngKTEu4yLYK3FCFIiRQqSLqTMw7CGQkm6IK9mbCPZVpj-sSGHPPcBBbetpGnraRl9moCjd5l9dUeOOvxhU9_XnDbObPfn99Dru6c5rGdwGl5G2FlwQtkuDKrKkvrLDF6w
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1bT8IwFD5BjFEfvIBGvPbBJ-NghQ7WR0K4qIA-QOBt2bqzxAjD6DCRX-_pNggaY3xbmrZpetqe71tPvwNwLQWaqKRrEJYlglJD2nOyqozAspGbgXRV_Iq_1692huJ-bI0zcLt6C4OIcfAZFvVnfJfvz9Rc_yorSSHIv8kN2CS_b5WT11qrOwNhi1QdlRt0Msv0DpObstTtjRrEBcu8WCGIURb8mxdaS6sSe5XWPvSW40mCSV6K88grqsUPqcb_DvgA9lJ4yerJejiEDIY52F0THczBVhz0qd7z8FhnOsxj8smasZAE9cW4TVyPtTsLRiyVdgF70mnUWF0HngfkQtlzyIRphFPWdvuMEC-bTo2R-4HMah_BsNUcNDpGmmDBUOTlI4O7Nd-SRFGrPuEA5NzT4j2oMCCQYdvKD8iQhB-RuxYKlw4AVSa8FkhUtpK-rBxDNpyFeAJMi7jImvJsX_nCJ1ipAmpM3NvzZCArogDmcsIdlaqP6yQYEydmIaZ0tI0cbSMntVEBblZNXhPpjb8q5_X0ryqmM3_6e_EVbHcGva7Tves_nMGO7igJ6juHbPQ2xwsCGpF3Ga-vLzUoyTU
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+Highly+Efficient+18%E2%80%9340+GHz+Linear+Power+Amplifier+in+40-nm+GaN+for+mm-Wave+5G&rft.jtitle=IEEE+microwave+and+wireless+components+letters&rft.au=Mayeda%2C+Jill+C.&rft.au=Lie%2C+Donald+Y.+C.&rft.au=Lopez%2C+Jerry&rft.date=2021-08-01&rft.issn=1531-1309&rft.eissn=1558-1764&rft.volume=31&rft.issue=8&rft.spage=1008&rft.epage=1011&rft_id=info:doi/10.1109%2FLMWC.2021.3085241&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_LMWC_2021_3085241
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1531-1309&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1531-1309&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1531-1309&client=summon