Strategy against electromigration-induced stress by passivation thickness design
•The effect of passivation thickness on electromigration-induced stress state was examined.•The lamé equation was introduced for providing analytic solution of passivation fracture due to electromigration.•The strategy of passivation thickness for preventing electromigration damage were proposed. Th...
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| Published in | Thin solid films Vol. 784; p. 140084 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.11.2023
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| Online Access | Get full text |
| ISSN | 0040-6090 1879-2731 |
| DOI | 10.1016/j.tsf.2023.140084 |
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| Abstract | •The effect of passivation thickness on electromigration-induced stress state was examined.•The lamé equation was introduced for providing analytic solution of passivation fracture due to electromigration.•The strategy of passivation thickness for preventing electromigration damage were proposed.
This study proposes a strategy to determine an appropriate passivation thickness to prevent electromigration (EM) deterioration. Although it is widely recognized that depositing passivation can effectively saturate the interconnect resistance against EM deterioration, the effect of passivation thickness on the lifetime of interconnections against EM has not been thoroughly investigated. In this study, quantitative models were developed to show direct analytical solutions. First, the effects of passivation thickness on the interconnect resistance against EM were examined through experiments using an Al interconnect coated with tetraethyl orthosilicate passivation. Assuming realistic conditions, the behavior of passivation fracturing as a function of passivation thickness was modeled under elastic, elastic-plastic, and elastic-plastic with plastic zone conditions. The models considered the critical tensile stress in the circumferential direction at the inner wall of a long cylindrical tube subject to internal pressure. These three models explain the saturation mechanism of passivation against EM resistance. Based on these findings, an appropriate passivation thickness for the required resistance against passivation fracture due to EM can be determined. This research provides valuable insights for designing reliable interconnects in microelectronics. |
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| AbstractList | •The effect of passivation thickness on electromigration-induced stress state was examined.•The lamé equation was introduced for providing analytic solution of passivation fracture due to electromigration.•The strategy of passivation thickness for preventing electromigration damage were proposed.
This study proposes a strategy to determine an appropriate passivation thickness to prevent electromigration (EM) deterioration. Although it is widely recognized that depositing passivation can effectively saturate the interconnect resistance against EM deterioration, the effect of passivation thickness on the lifetime of interconnections against EM has not been thoroughly investigated. In this study, quantitative models were developed to show direct analytical solutions. First, the effects of passivation thickness on the interconnect resistance against EM were examined through experiments using an Al interconnect coated with tetraethyl orthosilicate passivation. Assuming realistic conditions, the behavior of passivation fracturing as a function of passivation thickness was modeled under elastic, elastic-plastic, and elastic-plastic with plastic zone conditions. The models considered the critical tensile stress in the circumferential direction at the inner wall of a long cylindrical tube subject to internal pressure. These three models explain the saturation mechanism of passivation against EM resistance. Based on these findings, an appropriate passivation thickness for the required resistance against passivation fracture due to EM can be determined. This research provides valuable insights for designing reliable interconnects in microelectronics. |
| ArticleNumber | 140084 |
| Author | Kimura, Yasuhiro |
| Author_xml | – sequence: 1 givenname: Yasuhiro orcidid: 0000-0001-7202-451X surname: Kimura fullname: Kimura, Yasuhiro email: yasuhiro.kimura@mae.nagoya-u.ac.jp organization: Department of Micro-Nano Mechanical Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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