High-Performance Cascaded Surface-Illuminated Ge-on-Si APD Array
In this letter, we report a cascaded surface-illuminated Germanium-on-Silicon (Ge-on-Si) avalanche photodiode (APD) array with a low dark current. The photodetector array cascades seven Ge-on-Si APDs through interconnecting the charge regions to form photomultiplier tubesiPMTjC which increases the e...
Saved in:
Published in | IEEE electron device letters Vol. 44; no. 2; pp. 205 - 208 |
---|---|
Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.02.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | In this letter, we report a cascaded surface-illuminated Germanium-on-Silicon (Ge-on-Si) avalanche photodiode (APD) array with a low dark current. The photodetector array cascades seven Ge-on-Si APDs through interconnecting the charge regions to form photomultiplier tubesiPMTjC which increases the effective light absorption area compared to the single APD scheme. To the best of our knowledge, this is the first time that Ge-on-Si PMT has been reported. The optimum response of single-electrode (2 pixels) Ge-on-Si APD is 2.4 A/W with a dark current of 100 nA, and the optimum bandwidth is 52 MHz. PMT has a responsivity of approximately 3 times that of a single-electrode Ge-on-Si APD for the same dark current (100 nA). With low dark current, our PMT has a better optical amplification effect than the parallel Ge-on-Si PD. We have also further tested the current tuning properties of the Ge-on-Si APD arrays with different applied Ge voltages. The test demonstrates the feasibility of cascading three-electrode APD arrays. A cascaded Ge-on-Si APD array with good photodetection properties at low-light conditions has been demonstrated which provides guidance for the design of large-scale Ge-on-Si APD arrays for light detection and ranging application. |
---|---|
AbstractList | In this letter, we report a cascaded surface-illuminated Germanium-on-Silicon (Ge-on-Si) avalanche photodiode (APD) array with a low dark current. The photodetector array cascades seven Ge-on-Si APDs through interconnecting the charge regions to form photomultiplier tubesiPMTjC which increases the effective light absorption area compared to the single APD scheme. To the best of our knowledge, this is the first time that Ge-on-Si PMT has been reported. The optimum response of single-electrode (2 pixels) Ge-on-Si APD is 2.4 A/W with a dark current of 100 nA, and the optimum bandwidth is 52 MHz. PMT has a responsivity of approximately 3 times that of a single-electrode Ge-on-Si APD for the same dark current (100 nA). With low dark current, our PMT has a better optical amplification effect than the parallel Ge-on-Si PD. We have also further tested the current tuning properties of the Ge-on-Si APD arrays with different applied Ge voltages. The test demonstrates the feasibility of cascading three-electrode APD arrays. A cascaded Ge-on-Si APD array with good photodetection properties at low-light conditions has been demonstrated which provides guidance for the design of large-scale Ge-on-Si APD arrays for light detection and ranging application. |
Author | Gao, Fengli Li, Yingzhi Liu, Xiaobin Lo, GuoQiang Li, Xueyan Na, Quanxin Guo, Pengfei Li, Xuetong Zhi, Zihao Hu, Heming Chen, Baisong Kang, BoNan Xie, Qijie Song, Junfeng |
Author_xml | – sequence: 1 givenname: Xiaobin surname: Liu fullname: Liu, Xiaobin organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 2 givenname: Xuetong surname: Li fullname: Li, Xuetong organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 3 givenname: Yingzhi surname: Li fullname: Li, Yingzhi organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 4 givenname: Zihao surname: Zhi fullname: Zhi, Zihao organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 5 givenname: Baisong surname: Chen fullname: Chen, Baisong organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 6 givenname: Heming surname: Hu fullname: Hu, Heming organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 7 givenname: Qijie orcidid: 0000-0002-0492-7511 surname: Xie fullname: Xie, Qijie organization: Peng Cheng Laboratory, Shenzhen, China – sequence: 8 givenname: Quanxin surname: Na fullname: Na, Quanxin organization: Peng Cheng Laboratory, Shenzhen, China – sequence: 9 givenname: Xueyan orcidid: 0000-0002-9206-9480 surname: Li fullname: Li, Xueyan organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 10 givenname: Pengfei surname: Guo fullname: Guo, Pengfei organization: Advanced Micro Foundry Pte Ltd. (AMF), Science Park Rd, Singapore – sequence: 11 givenname: Fengli orcidid: 0000-0001-6097-4999 surname: Gao fullname: Gao, Fengli organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 12 givenname: GuoQiang orcidid: 0000-0001-7783-3180 surname: Lo fullname: Lo, GuoQiang organization: Advanced Micro Foundry Pte Ltd. (AMF), Science Park Rd, Singapore – sequence: 13 givenname: BoNan surname: Kang fullname: Kang, BoNan organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China – sequence: 14 givenname: Junfeng orcidid: 0000-0002-2079-7278 surname: Song fullname: Song, Junfeng email: songjf@jlu.edu.cn organization: State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China |
BookMark | eNpNkEFrAjEQhUOxULW999CD0HPsJJPdbG4VtVYQKtieQzY7aVd012bdg_--K3roaeDxvTfwDVivqiti7FHAWAgwL6v5bCxByjFKRMDshvVFkmQckhR7rA9aCY4C0js2aJotgFBKqz57fS-_f_iaYqjj3lWeRlPXeFdQMdq0MThPfLnbtfuycscuWxCvK74pR5P1bDSJ0Z3u2W1wu4YernfIvt7mn9N3vvpYLKeTFffSyCMvcu1M0Jk3CpWRpCAkJkFUVFCOEIpcCa-KkCjpMjCkshw05Tpo9CIPiEP2fNk9xPq3peZot3Ubq-6llVqD1joxaUfBhfKxbppIwR5iuXfxZAXYsyfbebJnT_bqqas8XSolEf3DAVBCin9QpmOq |
CODEN | EDLEDZ |
CitedBy_id | crossref_primary_10_1088_1361_6463_ad455f crossref_primary_10_3390_photonics10070780 |
Cites_doi | 10.1109/lpt.2018.2804909 10.1134/s1064226916030207 10.1364/prj.452004 10.1007/s11664-022-09531-9 10.1088/1748-0221/10/11/t11003 10.1364/OFC.2019.Tu3E.3 10.1134/s1064226916030219 10.1109/jlt.2009.2035090 10.1016/j.nima.2006.05.072 10.1364/oe.26.020544 10.1364/oe.390079 10.1109/jstqe.2019.2911458 10.1049/el.2019.4105 10.1364/oe.23.022857 |
ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023 |
DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M |
DOI | 10.1109/LED.2022.3233038 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library Online CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Technology Research Database |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library Online url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1558-0563 |
EndPage | 208 |
ExternalDocumentID | 10_1109_LED_2022_3233038 10003206 |
Genre | orig-research |
GrantInformation_xml | – fundername: Program for Jilin University (JLU) Science and Technology Innovative Research Team grantid: JLUSTIRT; 2021TD-39 funderid: 10.13039/501100013284 – fundername: National Key Research and Development Program of China grantid: 2022YFB2804504 funderid: 10.13039/501100012166 – fundername: National Natural Science Foundation of China grantid: 61934003; 62090054 funderid: 10.13039/501100001809 – fundername: Jilin Scientific and Technological Development Program grantid: 20200501007GX; 20210301014GX funderid: 10.13039/501100013061 |
GroupedDBID | -~X .DC 0R~ 29I 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ACGFO ACIWK ACNCT AENEX AETIX AFFNX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD HZ~ IBMZZ ICLAB IFIPE IFJZH IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RIG RNS TAE TN5 TWZ VH1 AAYXX CITATION 7SP 8FD L7M |
ID | FETCH-LOGICAL-c292t-db7a9f78c943492e40f595334edeb30fdb41c4df542a809e48b07eb7f73c1bf33 |
IEDL.DBID | RIE |
ISSN | 0741-3106 |
IngestDate | Thu Oct 10 19:08:33 EDT 2024 Fri Aug 23 03:01:46 EDT 2024 Mon Nov 04 12:05:44 EST 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 2 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c292t-db7a9f78c943492e40f595334edeb30fdb41c4df542a809e48b07eb7f73c1bf33 |
ORCID | 0000-0001-7783-3180 0000-0002-0492-7511 0000-0002-9206-9480 0000-0002-2079-7278 0000-0001-6097-4999 |
PQID | 2770777596 |
PQPubID | 85488 |
PageCount | 4 |
ParticipantIDs | crossref_primary_10_1109_LED_2022_3233038 ieee_primary_10003206 proquest_journals_2770777596 |
PublicationCentury | 2000 |
PublicationDate | 2023-02-01 |
PublicationDateYYYYMMDD | 2023-02-01 |
PublicationDate_xml | – month: 02 year: 2023 text: 2023-02-01 day: 01 |
PublicationDecade | 2020 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE electron device letters |
PublicationTitleAbbrev | LED |
PublicationYear | 2023 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
References | ref13 ref12 ref14 ref11 ref10 ref2 ref1 ref8 ref7 ref9 ref4 ref3 ref6 ref5 |
References_xml | – ident: ref1 doi: 10.1109/lpt.2018.2804909 – ident: ref2 doi: 10.1134/s1064226916030207 – ident: ref12 doi: 10.1364/prj.452004 – ident: ref5 doi: 10.1007/s11664-022-09531-9 – ident: ref14 doi: 10.1088/1748-0221/10/11/t11003 – ident: ref11 doi: 10.1364/OFC.2019.Tu3E.3 – ident: ref3 doi: 10.1134/s1064226916030219 – ident: ref8 doi: 10.1109/jlt.2009.2035090 – ident: ref13 doi: 10.1016/j.nima.2006.05.072 – ident: ref10 doi: 10.1364/oe.26.020544 – ident: ref9 doi: 10.1364/oe.390079 – ident: ref7 doi: 10.1109/jstqe.2019.2911458 – ident: ref4 doi: 10.1049/el.2019.4105 – ident: ref6 doi: 10.1364/oe.23.022857 |
SSID | ssj0014474 |
Score | 2.4624138 |
Snippet | In this letter, we report a cascaded surface-illuminated Germanium-on-Silicon (Ge-on-Si) avalanche photodiode (APD) array with a low dark current. The... |
SourceID | proquest crossref ieee |
SourceType | Aggregation Database Publisher |
StartPage | 205 |
SubjectTerms | Absorption Arrays Avalanche diodes Avalanche photodiodes Dark current Electrodes Electromagnetic absorption Ge-on-Si APD Germanium Lidar low dark current low-light detection Photoconductivity photodetector array Photodetectors Photodiodes Photomultiplier tubes PMT Silicon |
Title | High-Performance Cascaded Surface-Illuminated Ge-on-Si APD Array |
URI | https://ieeexplore.ieee.org/document/10003206 https://www.proquest.com/docview/2770777596 |
Volume | 44 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3fS8MwEA66J33w58TplD744kO6LEmX5s0xN6foGMzB3kqbXGAInWztg_71Jm03hyL41kJbjrs0d5f77juEbuIQuAZusIKAYm5vcaxYgDvG-iorueSha3B-GXWGU_40C2ZVs3rRCwMABfgMfHdZ1PL1QuXuqKzlzqIZdQTbu0LKsllrUzLgvKRcti7SbixkU5MksvXcv7eZIKU-ozZ9d60oWz6oGKryaycu3MvgEI3WgpWokjc_zxJfff7gbPy35EfooAo0vW65Mo7RDqQnaH-LfvAU3TmQBx5_tw54vXjl8PLam-RLEyvAj24Q8jy1Aan2HgAvUjyZe93xvf3uMv6oo-mg_9ob4mqiAlZU0gzrRMTSiFA5VjhJgRMTOHwpB22TamJ0wtuKaxNwGodEAg8TIiARRjDVTgxjZ6iWLlI4R55hNvRgNj5vx5zrJAw5o1qpECjR1uykgW7XOo7eS-KMqEg4iIysPSJnj6iyRwPVncq2niu11UDNtVWi6tdaRVQIIoQIZOfij9cu0Z4bCl9iq5uoli1zuLKhQ5ZcF0vmC4iOvfY |
link.rule.ids | 315,783,787,799,27936,27937,55086 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8MwDI4QHIADb8RgQA9cOGRkSbqkN9BgbLBNkwYStyoPR5qQOrTHAX49SdvBBELi1kptZdlp_Dn2ZyN0oSRwC9xhAzHF3N9iZViMG877Ki95wmUgOPf6jfYzf3iJX0qyes6FAYC8-Axq4TLP5duxmYejsqtwFs1oaLC95oG1bBR0ra-kAedF02XvJP3WQr6ykiS56t7d-liQ0hqjPoAPZJQlL5SPVfm1F-cOprWN-gvRirqS19p8pmvm40fXxn_LvoO2SqgZ3RRrYxetQLaHNpcaEO6j61DmgQff5IGoqaahYt5Gw_nEKQO4E0YhjzIPSW10D3ic4eEouhnc-u9O1PsBem7dPTXbuJypgA1N6AxbLVTihDShL1xCgRMXhwpTDtaH1cRZzeuGWxdzqiRJgEtNBGjhBDN17Rg7RKvZOIMjFDnmwQfzCL2uOLdaSs6oNUYCJdYbnlTQ5ULH6VvROiPNQw6SpN4eabBHWtqjgg6CypaeK7RVQdWFVdLy55qmVAgihIiTxvEfr52j9fZTr5t2O_3HE7QRRsQXldZVtDqbzOHUA4mZPsuXzyepgsFB |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=High-Performance+Cascaded+Surface-Illuminated+Ge-on-Si+APD+Array&rft.jtitle=IEEE+electron+device+letters&rft.au=Liu%2C+Xiaobin&rft.au=Li%2C+Xuetong&rft.au=Li%2C+Yingzhi&rft.au=Zihao+Zhi&rft.date=2023-02-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0741-3106&rft.eissn=1558-0563&rft.volume=44&rft.issue=2&rft.spage=205&rft_id=info:doi/10.1109%2FLED.2022.3233038&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0741-3106&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0741-3106&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0741-3106&client=summon |