Elucidating the role of oxygen vacancies on the electrical conductivity of β-Ga2O3 single-crystals

• Published in: Applied physics letters Vol. 123; no. 17
• Main Authors: Narayanan, Maneesha, Shah, Amit P., Ghosh, Sandip, Thamizhavel, Arumugam, Bhattacharya, Arnab
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 23.10.2023
• Subjects: Absorption; Annealing; Applied physics; Carrier density; Electrical resistivity; Gallium oxides; Oxygen; Raman spectroscopy; Reduction; Single crystals

The contribution of oxygen vacancies ( V O) to the electrical conductivity of unintentionally doped β-Ga2O3 has been a topic of recent debate. Here, we use a combination of Hall measurements and Raman spectroscopy on as-grown and O2-annealed β-Ga2O3 crystals to investigate the role of V O on electri...