Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology - Li, Zhao-Yang; Wang, Xue-Jiao; Jiang, Yu-Long (IEEE transactions on electron devices, 2024)
Keywords: Amorphous silicon; Annealing; FinFET; FinFETs; Hafnium oxide; high-k/metal gate (HKMG); Logic gates; metal boundary effect (MBE); Molecular beam epitaxial growth; MOSFET; thermal annealing; Threshold voltage; Tin