Tuning donor level of nitrogen-doped diamond by deep strain engineering—An ab initio study

• Published in: Applied physics letters Vol. 123; no. 6
• Main Authors: Yang, Limin, Fan, Rong, Hu, Alice, Ma, Junzhang, Liu, Yingxia, Lu, Yang
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 07.08.2023
• Subjects: Applied physics; Compressive properties; Design of experiments; Diamonds; Electrical properties; First principles; Nitrogen; Semiconductor devices; Strain

The development of diamond semiconductor devices has been hindered by the challenge of preparing n-type diamond with a shallow donor state. Recently, elastic strain engineering has emerged as a promising strategy for modulating the electrical properties of diamond. In this study, we used first-princ...