Two-dimensional van der Waals ferroelectric field-effect transistors toward nonvolatile memory and neuromorphic computing

• Published in: Applied physics letters Vol. 123; no. 18
• Main Authors: Lin, Xiankai, Huang, Xuguang, Zhang, Qian, Yi, Jianxian, Liu, Shenghua, Liang, Qijie
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 30.10.2023
• Subjects: Applied physics; CMOS; Computer memory; Ferroelectric materials; Ferroelectricity; Field effect transistors; Moore's law; Nanoelectronics; Neuromorphic computing; Power consumption; Semiconductor devices; Transistors

With the gradual decline in Moore's law, traditional silicon-based technologies have encountered numerous challenges and limitations, prompting researchers to seek solutions. Two-dimensional (2D) van der Waals (vdWs) ferroelectric (Fe) field-effect transistors (FETs) (2D vdWs FeFETs) are device...