Two-dimensional van der Waals ferroelectric field-effect transistors toward nonvolatile memory and neuromorphic computing

• Published in: Applied physics letters Vol. 123; no. 18
• Main Authors: Lin, Xiankai, Huang, Xuguang, Zhang, Qian, Yi, Jianxian, Liu, Shenghua, Liang, Qijie
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 30.10.2023
• Subjects: Applied physics; CMOS; Computer memory; Ferroelectric materials; Ferroelectricity; Field effect transistors; Moore's law; Nanoelectronics; Neuromorphic computing; Power consumption; Semiconductor devices; Transistors
• DOI: 10.1063/5.0165837
• ISSN: 0003-6951

With the gradual decline in Moore's law, traditional silicon-based technologies have encountered numerous challenges and limitations, prompting researchers to seek solutions. Two-dimensional (2D) van der Waals (vdWs) ferroelectric (Fe) field-effect transistors (FETs) (2D vdWs FeFETs) are devices that integrate emerging 2D vdWs ferroelectric materials into the transistor structures. In comparison with traditional complementary metal oxide semiconductor FETs (COMSFETs), they exhibit superior performance, including lower power consumption, higher switching speed, and improved stability. The vdWs FeFETs are anticipated to surpass the limits imposed by Moore's law, offering increased possibilities and opportunities for research and application in the field of nanoelectronics, particularly in nonvolatile memory (NVM) and neuromorphic computing (NMC). In this review, we summarize the recent research progress of vdWs FeFETs and elucidate their development origin, basic structure, and working mechanism. Furthermore, we explore the application of vdWs FeFETs in NVM, NMC, and large-scale arrays. Finally, we highlight the prominent challenges and future directions in this field.