Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes

• Published in: Journal of lightwave technology Vol. 37; no. 13; pp. 3315 - 3323
• Main Authors: Hossain, Md Mottaleb, David, John P. R., Hayat, Majeed M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Absorption; Avalanche diodes; Avalanche photodiode; Avalanche photodiodes; Carrier injection; Charge carrier processes; Electric fields; Electron avalanche; Electrons; excess-noise factor; Holes (electron deficiencies); impact ionization; Integral equations; Ionization; Ionization coefficients; Mathematical analysis; Mathematical model; mean-gain; mixed carrier injection; Multiplication; Noise; Noise factor; Photodiodes; Photon avalanches; Photonics; Photons; Probability distribution functions

The well-known analytical formula for the excess noise factor associated with avalanche photodiodes (APDs), developed by R. J. McIntyre in 1966, assumes the injection of either an electron or a hole at the edge of the APD's avalanche region. This formula is based on the statistics of the probab...