Etching of InAs in HCl gas and selective removal of InAs layer on GaAs in ultrahigh-vacuum processing system
The etch rate of InAs in HCl gas is studied for the first time and is found to be far greater than that of GaAs. The complete removal of an InAs layer grown on GaAs was achieved by this etching, resulting in a very flat surface. This is confirmed by the photoluminescence study on a novel GaAs/AlGaAs...
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Published in | Japanese Journal of Applied Physics Vol. 32; no. 10B; pp. L1496 - L1499 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.10.1993
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Subjects | |
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Abstract | The etch rate of InAs in HCl gas is studied for the first time and is found to be far greater than that of GaAs. The complete removal of an InAs layer grown on GaAs was achieved by this etching, resulting in a very flat surface. This is confirmed by the photoluminescence study on a novel GaAs/AlGaAs quantum well (QW), which was prepared by depositing a 50 nm InAs film at the center of the well, and subsequently etching it off before the remainder of the QW was formed. This unique selectivity can be employed to remove an InAs film which is used in the
in situ
patterning technique of GaAs. |
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AbstractList | The etch rate of InAs in HCl gas is studied for the first time and is found to be far greater than that of GaAs. The complete removal of an InAs layer grown on GaAs was achieved by this etching, resulting in a very flat surface. This is confirmed by the photoluminescence study on a novel GaAs/AlGaAs quantum well (QW), which was prepared by depositing a 50 nm InAs film at the center of the well, and subsequently etching it off before the remainder of the QW was formed. This unique selectivity can be employed to remove an InAs film which is used in the
in situ
patterning technique of GaAs. |
Author | NOGE, H AKIYAMA, H YOSHIDA, T SOMEYA, T KADOYA, Y SAKAKI, H |
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Keywords | Inorganic compounds Semiconductor materials Photoluminescence Surfaces Binary compounds Selective etching Kinetics RHEED Experimental study Ultrahigh vacuum Indium arsenides |
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References | 1989; 95 1989; 96 1988; 52 1989; 65 1993; 127 1990; B8 1992; 61 1992; 72 1987; 26 1984; 45 |
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SubjectTerms | Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid-fluid interfaces Surface treatments Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) |
Title | Etching of InAs in HCl gas and selective removal of InAs layer on GaAs in ultrahigh-vacuum processing system |
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