Unraveling the Origin of Low Optical Efficiency for Quantum Dot White Light-Emitting Diodes From the Perspective of Aggregation-Induced Scattering Effect

Quantum dots (QDs) are promising materials for various optoelectronic applications. However, the efficiency of QD white light-emitting diodes (QD-white-LEDs) is not at the desired level, particularly when the QD concentration in the silicone matrix is high and the corresponding mechanism has not bee...

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Published inIEEE transactions on electron devices Vol. 68; no. 4; pp. 1738 - 1745
Main Authors Li, Zong-Tao, Li, Jie-Xin, Deng, Zi-Hao, Liang, Jia-Yong, Li, Jia-Sheng
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Abstract Quantum dots (QDs) are promising materials for various optoelectronic applications. However, the efficiency of QD white light-emitting diodes (QD-white-LEDs) is not at the desired level, particularly when the QD concentration in the silicone matrix is high and the corresponding mechanism has not been fully elucidated. In this study, we experimentally and theoretically investigated the aggregation-induced scattering (AIS) effect of QDs in silicone and unraveled the origin of low efficiency for QD-white-LED devices. Three-dimensional finite-difference time domain and ray tracing simulations were carried out to establish the AIS model for QDs. Results indicate that the AIS effect is stronger for higher QD concentrations and leads to a larger effective aggregate size (EAS), which was confirmed by comparing with the experimental results of QD-silicone films. Furthermore, we found that the AIS effect causes a significant reduction in the radiant efficiencies of QD-white-LEDs when the EAS exceeds 50 particles, which is validated by fabricated devices. According to the spectral energy analysis, the low efficiency of QD-white-LEDs can be attributed to a strong AIS effect at high QD concentrations, causing severe backscattering and reabsorption loss. This study is also important for nondestructive testing the degree of aggregation demonstrated by QDs in a silicone matrix and for precisely modeling QD-white-LEDs.
AbstractList Quantum dots (QDs) are promising materials for various optoelectronic applications. However, the efficiency of QD white light-emitting diodes (QD-white-LEDs) is not at the desired level, particularly when the QD concentration in the silicone matrix is high and the corresponding mechanism has not been fully elucidated. In this study, we experimentally and theoretically investigated the aggregation-induced scattering (AIS) effect of QDs in silicone and unraveled the origin of low efficiency for QD-white-LED devices. Three-dimensional finite-difference time domain and ray tracing simulations were carried out to establish the AIS model for QDs. Results indicate that the AIS effect is stronger for higher QD concentrations and leads to a larger effective aggregate size (EAS), which was confirmed by comparing with the experimental results of QD-silicone films. Furthermore, we found that the AIS effect causes a significant reduction in the radiant efficiencies of QD-white-LEDs when the EAS exceeds 50 particles, which is validated by fabricated devices. According to the spectral energy analysis, the low efficiency of QD-white-LEDs can be attributed to a strong AIS effect at high QD concentrations, causing severe backscattering and reabsorption loss. This study is also important for nondestructive testing the degree of aggregation demonstrated by QDs in a silicone matrix and for precisely modeling QD-white-LEDs.
Author Deng, Zi-Hao
Li, Jia-Sheng
Li, Jie-Xin
Liang, Jia-Yong
Li, Zong-Tao
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Cites_doi 10.1063/1.3702430
10.1002/adom.201900223
10.1063/1.1872216
10.1002/admt.201900941
10.1109/ACCESS.2019.2921058
10.1109/TED.2018.2830798
10.1109/JQE.2020.2986018
10.1364/OE.26.027716
10.1038/nature13829
10.1002/adma.201703506
10.1002/adfm.201600109
10.1038/nphoton.2012.328
10.1109/JQE.2015.2472341
10.1016/S0360-1285(98)00017-3
10.1115/1.4033143
10.1115/1.4044475
10.1007/978-3-642-28738-1
10.1021/am400433y
10.1021/nn3052428
10.1021/jacs.6b10681
10.1002/anie.201406836
10.1038/nenergy.2016.157
10.1038/nphoton.2014.54
10.1002/adom.201800354
10.1016/S1386-9477(02)00374-0
10.1364/PRJ.6.000090
10.1038/nnano.2009.193
10.1088/0022-3727/43/35/354002
10.1021/acsphotonics.6b00457
10.1002/adma.201705393
10.1002/adma.201607022
10.1039/c2sc00561a
10.1021/acsnano.0c05735
10.1109/TED.2020.3043994
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References ref35
ref13
ref34
ref12
ref15
ref36
ref14
ref31
ref11
ref32
ref10
ref2
ref1
ref17
ref16
ref19
ref18
prahl (ref33) 1989; 1035
chen (ref37) 2020
yee (ref30) 1966; ap 14
ref24
ref23
ref26
ref25
ref20
ref22
ref21
ref28
ref27
ref29
ref8
ref7
ref9
ref4
ref3
ref6
ref5
References_xml – ident: ref23
  doi: 10.1063/1.3702430
– ident: ref28
  doi: 10.1002/adom.201900223
– ident: ref6
  doi: 10.1063/1.1872216
– ident: ref10
  doi: 10.1002/admt.201900941
– volume: 1035
  year: 1989
  ident: ref33
  article-title: A Monte Carlo model of light propagation in tissue
  publication-title: Proc SPIE
  contributor:
    fullname: prahl
– volume: ap 14
  start-page: 302
  year: 1966
  ident: ref30
  article-title: Numerical solution of initial boundary value problems involving Maxwell's equations in isotropic media
  publication-title: IEEE Trans Antennas Propag
  contributor:
    fullname: yee
– ident: ref9
  doi: 10.1109/ACCESS.2019.2921058
– ident: ref14
  doi: 10.1109/TED.2018.2830798
– ident: ref36
  doi: 10.1109/JQE.2020.2986018
– ident: ref27
  doi: 10.1364/OE.26.027716
– ident: ref1
  doi: 10.1038/nature13829
– ident: ref31
  doi: 10.1002/adma.201703506
– ident: ref17
  doi: 10.1002/adfm.201600109
– ident: ref8
  doi: 10.1038/nphoton.2012.328
– ident: ref34
  doi: 10.1109/JQE.2015.2472341
– ident: ref32
  doi: 10.1016/S0360-1285(98)00017-3
– ident: ref13
  doi: 10.1115/1.4033143
– ident: ref21
  doi: 10.1115/1.4044475
– ident: ref29
  doi: 10.1007/978-3-642-28738-1
– ident: ref20
  doi: 10.1021/am400433y
– ident: ref35
  doi: 10.1021/nn3052428
– ident: ref15
  doi: 10.1021/jacs.6b10681
– ident: ref18
  doi: 10.1002/anie.201406836
– ident: ref12
  doi: 10.1038/nenergy.2016.157
– ident: ref11
  doi: 10.1038/nphoton.2014.54
– ident: ref26
  doi: 10.1002/adom.201800354
– ident: ref4
  doi: 10.1016/S1386-9477(02)00374-0
– ident: ref22
  doi: 10.1364/PRJ.6.000090
– ident: ref3
  doi: 10.1038/nnano.2009.193
– ident: ref24
  doi: 10.1088/0022-3727/43/35/354002
– ident: ref16
  doi: 10.1021/acsphotonics.6b00457
– ident: ref5
  doi: 10.1002/adma.201705393
– ident: ref2
  doi: 10.1002/adma.201607022
– ident: ref19
  doi: 10.1039/c2sc00561a
– start-page: 1
  year: 2020
  ident: ref37
  article-title: Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites
  publication-title: Nature Photon
  contributor:
    fullname: chen
– ident: ref25
  doi: 10.1021/acsnano.0c05735
– ident: ref7
  doi: 10.1109/TED.2020.3043994
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Snippet Quantum dots (QDs) are promising materials for various optoelectronic applications. However, the efficiency of QD white light-emitting diodes (QD-white-LEDs)...
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SubjectTerms Agglomeration
Aggregation-induced scattering (AIS)
Artificial intelligence
Backscattering
Efficiency
Finite difference method
Lasers
Light emitting diodes
Nondestructive testing
Optical device fabrication
optical efficiency
Optical scattering
Optoelectronics
precise modeling
Quantum dots
quantum dots (QDs)
Ray tracing
Scattering
Silicone resins
Time-domain analysis
White light
Title Unraveling the Origin of Low Optical Efficiency for Quantum Dot White Light-Emitting Diodes From the Perspective of Aggregation-Induced Scattering Effect
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