Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

• Published in: IEEE transactions on nuclear science Vol. 65; no. 2; pp. 732 - 738
• Main Authors: Kupsc, Pawel, Javanainen, Arto, Ferlet-Cavrois, Veronique, Muschitiello, Michele, Barnes, Andrew, Zadeh, Ali, Calcutt, Jordan, Poivey, Christian, Stieglauer, Hermann, Voss, Kay-Obbe
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bridge failure; Capacitors; Current measurement; Dielectric breakdown; Dielectric measurement; Edge effect; Electrodes; Gallium nitrides; Insulators; Ions; Metals; Metal–insulator–metal (MIM) devices; metal–insulator–semiconductor (MIS) devices; Microbeams; MIM capacitors; Plates (structural members); Silicon nitride; Single Event Effects; single event effects (SEEs); single event gate rupture
• DOI: 10.1109/TNS.2018.2791564
• ISSN: 0018-9499

Broad-beam and microbeam single-event effect tests were performed on metal-insulator-metal capacitors with three different thicknesses of silicon nitride (Si 3 N 4 ) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the failure occurs in the body of the capacitor.