Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compe...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 69; no. 7; pp. 3694 - 3699
Main Authors Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., Esseni, D.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge trapping
Compensation
Electrodes
Ferroelectric materials
ferroelectric tunneling junction
Ferroelectricity
Iron
Mathematical models
Numerical models
optimization
Polarization
Switches
synaptic device
Tin
Trapped charge
Tunnel junctions
Tunneling
Online AccessGet full text

Cover

More Information
Summary:In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical insights and design guidelines for the operation of FTJs as multilevel synaptic devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3175684