Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID) irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies. When isolation oxides of digital and analog MOS devices and ICs exhibit satisfactory performance, failure doses often a...

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Published inIEEE transactions on nuclear science Vol. 67; no. 7; pp. 1216 - 1240
Main Author Fleetwood, Daniel M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Border traps
Couplings
defects
Density functional theory
Dielectrics
Electrostatics
High electron mobility transistors
high-K dielectrics
hydrogen
interface traps
Irradiation
Leakage current
LF noise
Logic gates
MOS
MOS devices
MOSFET
Noise
oxide traps
Oxides
Radiation dosage
Semiconductor devices
Silicon carbide
Silicon dioxide
total ionizing dose (TID)
Two dimensional materials
Vacancies
Online AccessGet full text
ISSN0018-9499
1558-1578
DOI10.1109/TNS.2020.2971861

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Abstract Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID) irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies. When isolation oxides of digital and analog MOS devices and ICs exhibit satisfactory performance, failure doses often are 100 krad(SiO 2 ) to 1 Mrad(SiO 2 ) or higher. Oxygen vacancies in SiO 2 and/or high-K gate dielectrics and/or O-vacancy complexes with hydrogen are typically the dominant border traps before and after irradiation. Low-frequency noise measurements can provide significant insight into effective border-trap microstructures, densities, and energy distributions, especially when combined with complementary measurements and density-functional theory calculations. Illustrative examples are presented for past, present, and emerging MOS technologies with SiO 2 and/or high-K gate dielectrics. These include FinFETs, MOS devices with alternative channels to Si, MOS devices based on 2-D materials, and SiC MOS devices. Traps in regions of MOS isolation oxides under strong gate control can also contribute to low-frequency noise, especially for multifinger, multiedge devices irradiated to high doses. The effects of defects on the 1/<inline-formula> <tex-math notation="LaTeX">f </tex-math></inline-formula> noise of GaN-based HEMTs and thin metal lines are illustrated for comparison.
AbstractList Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID) irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies. When isolation oxides of digital and analog MOS devices and ICs exhibit satisfactory performance, failure doses often are 100 krad(SiO 2 ) to 1 Mrad(SiO 2 ) or higher. Oxygen vacancies in SiO 2 and/or high-K gate dielectrics and/or O-vacancy complexes with hydrogen are typically the dominant border traps before and after irradiation. Low-frequency noise measurements can provide significant insight into effective border-trap microstructures, densities, and energy distributions, especially when combined with complementary measurements and density-functional theory calculations. Illustrative examples are presented for past, present, and emerging MOS technologies with SiO 2 and/or high-K gate dielectrics. These include FinFETs, MOS devices with alternative channels to Si, MOS devices based on 2-D materials, and SiC MOS devices. Traps in regions of MOS isolation oxides under strong gate control can also contribute to low-frequency noise, especially for multifinger, multiedge devices irradiated to high doses. The effects of defects on the 1/<inline-formula> <tex-math notation="LaTeX">f </tex-math></inline-formula> noise of GaN-based HEMTs and thin metal lines are illustrated for comparison.
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID) irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies. When isolation oxides of digital and analog MOS devices and ICs exhibit satisfactory performance, failure doses often are 100 krad(SiO2) to 1 Mrad(SiO2) or higher. Oxygen vacancies in SiO2 and/or high-K gate dielectrics and/or O-vacancy complexes with hydrogen are typically the dominant border traps before and after irradiation. Low-frequency noise measurements can provide significant insight into effective border-trap microstructures, densities, and energy distributions, especially when combined with complementary measurements and density-functional theory calculations. Illustrative examples are presented for past, present, and emerging MOS technologies with SiO2 and/or high-K gate dielectrics. These include FinFETs, MOS devices with alternative channels to Si, MOS devices based on 2-D materials, and SiC MOS devices. Traps in regions of MOS isolation oxides under strong gate control can also contribute to low-frequency noise, especially for multifinger, multiedge devices irradiated to high doses. The effects of defects on the 1/[Formula Omitted] noise of GaN-based HEMTs and thin metal lines are illustrated for comparison.
Author Fleetwood, Daniel M.
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  organization: Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN, USA
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Snippet Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID) irradiation are reviewed briefly for highly scaled devices in...
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SubjectTerms Border traps
Couplings
defects
Density functional theory
Dielectrics
Electrostatics
High electron mobility transistors
high-K dielectrics
hydrogen
interface traps
Irradiation
Leakage current
LF noise
Logic gates
MOS
MOS devices
MOSFET
Noise
oxide traps
Oxides
Radiation dosage
Semiconductor devices
Silicon carbide
Silicon dioxide
total ionizing dose (TID)
Two dimensional materials
Vacancies
Title Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
URI https://ieeexplore.ieee.org/document/8984269
https://www.proquest.com/docview/2425614072
Volume 67
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