APA (7th ed.) Citation

Fleetwood, D. M. (2020). Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies. IEEE transactions on nuclear science, 67(7), 1216-1240. https://doi.org/10.1109/TNS.2020.2971861

Chicago Style (17th ed.) Citation

Fleetwood, Daniel M. "Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies." IEEE Transactions on Nuclear Science 67, no. 7 (2020): 1216-1240. https://doi.org/10.1109/TNS.2020.2971861.

MLA (9th ed.) Citation

Fleetwood, Daniel M. "Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies." IEEE Transactions on Nuclear Science, vol. 67, no. 7, 2020, pp. 1216-1240, https://doi.org/10.1109/TNS.2020.2971861.