On the Explicit Saturation Drain Current in the Generalized EKV Compact MOSFET Model

• Published in: IEEE transactions on electron devices Vol. 68; no. 10; pp. 4813 - 4818
• Main Authors: Garcia-Sanchez, Francisco J., Ortiz-Conde, Adelmo
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Adaptation models; Charge-based metal–oxide–semiconductor field-effect transistor (MOSFET) modeling; Field effect transistors; generalized Enz–Krummenacher–Vittoz (EKV) model; Integrated circuit modeling; interface traps; Lambert W function; Logic gates; Mathematical analysis; Mathematical model; Metal oxide semiconductors; MOSFET; MOSFETs; oxide-trapped charges; Saturation; Semiconductor device modeling; Semiconductor devices; short-channel; simplified EKV model; Threshold voltage; Transconductance; velocity saturation

We present and discuss explicit closed-form expressions for the saturation drain current of short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxide and interface-trapped charges, and including carrier velocity saturation, according to the generalized Enz-Krummenach...