On the Explicit Saturation Drain Current in the Generalized EKV Compact MOSFET Model - Garcia-Sanchez, Francisco J.; Ortiz-Conde, Adelmo (IEEE transactions on electron devices, 2021)
Keywords: Adaptation models; Charge-based metal–oxide–semiconductor field-effect transistor (MOSFET) modeling; Field effect transistors; generalized Enz–Krummenacher–Vittoz (EKV) model; Integrated circuit modeling; interface traps; Lambert W function; Logic gates; Mathematical analysis; Mathematical model; Metal oxide semiconductors; MOSFET; MOSFETs; oxide-trapped charges; Saturation; Semiconductor device modeling; Semiconductor devices; short-channel; simplified EKV model; Threshold voltage; Transconductance; velocity saturation