Effect of homogeneous generalized thermoelasticity on semiconductor layer under magnetic field on Green and Naghdi model without energy dissipation
This paper aims to explore the impact of viscosity and time on the spread of thermoelastic waves within a uniform and isotropic three-dimensional medium subject to a thermal load on its surface. This study utilizes the temperature-rate-dependent thermoelasticity based on the GN model, specifically a...
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| Published in | International journal of advanced and applied sciences Vol. 11; no. 2; pp. 118 - 127 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
01.02.2024
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| Online Access | Get full text |
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| Summary: | This paper aims to explore the impact of viscosity and time on the spread of thermoelastic waves within a uniform and isotropic three-dimensional medium subject to a thermal load on its surface. This study utilizes the temperature-rate-dependent thermoelasticity based on the GN model, specifically applying the GN II model of generalized thermoelasticity, which does not account for energy dissipation. The normal mode analysis technique is employed to address the non-dimensional coupled field equations, yielding precise formulas for displacement, stress, temperature distribution, and strain. This issue is further illustrated by graphically depicting the field variables for a material similar to copper alongside the corresponding results. Comparative analyses of numerical data, with and without considering viscosity effects, suggest that the wave propagation speed will be limited. |
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| ISSN: | 2313-626X 2313-3724 |
| DOI: | 10.21833/ijaas.2024.02.014 |