High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction

In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and...

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Published inIEEE transactions on electron devices Vol. 66; no. 2; pp. 976 - 982
Main Authors Chang, Jih-Yuan, Liou, Bo-Ting, Huang, Man-Fang, Shih, Ya-Hsuan, Chen, Fang-Ming, Kuo, Yen-Kuang
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
AlGaN
Aluminum gallium nitride
carrier confinement
Confinement
Light emitting diodes
light extraction
light-emitting diodes (LEDs)
Mathematical model
Optical polarization
Optical properties
Organic light emitting diodes
Parameter sensitivity
Physical properties
Piezoelectric polarization
polarization effect
Quantum efficiency
Quantum wells
Radiative recombination
Ultraviolet radiation
Wide band gap semiconductors
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Abstract In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al 0.64 Ga 0.36 N QBs, n-Al 0.7 Ga 0.3 N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.
AbstractList In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al0.64Ga0.36N QBs, n-Al0.7Ga0.3N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.
In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al 0.64 Ga 0.36 N QBs, n-Al 0.7 Ga 0.3 N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.
Author Chang, Jih-Yuan
Kuo, Yen-Kuang
Liou, Bo-Ting
Shih, Ya-Hsuan
Chen, Fang-Ming
Huang, Man-Fang
Author_xml – sequence: 1
  givenname: Jih-Yuan
  orcidid: 0000-0002-0854-6257
  surname: Chang
  fullname: Chang, Jih-Yuan
  organization: Center for Teacher Education, National Changhua University of Education, Changhua, Taiwan
– sequence: 2
  givenname: Bo-Ting
  surname: Liou
  fullname: Liou, Bo-Ting
  organization: Department of Mechanical Engineering, Hsiuping University of Science and Technology, Taichung, Taiwan
– sequence: 3
  givenname: Man-Fang
  surname: Huang
  fullname: Huang, Man-Fang
  organization: Institute of Photonics, National Changhua University of Education, Changhua, Taiwan
– sequence: 4
  givenname: Ya-Hsuan
  surname: Shih
  fullname: Shih, Ya-Hsuan
  organization: Department of Photonics, National Cheng Kung University, Tainan, Taiwan
– sequence: 5
  givenname: Fang-Ming
  surname: Chen
  fullname: Chen, Fang-Ming
  organization: Institute of Photonics, National Changhua University of Education, Changhua, Taiwan
– sequence: 6
  givenname: Yen-Kuang
  orcidid: 0000-0001-5475-2513
  surname: Kuo
  fullname: Kuo, Yen-Kuang
  email: ykuo@cc.ncue.edu.tw
  organization: Department of Physics, National Changhua University of Education, Changhua, Taiwan
BookMark eNo9kE1LAzEURYMo2Fb3gpuA66lJJskkS2lHKxTctLgc5uOlTWkzNZOK_fdmmOrqkZdzz4M7RteudYDQAyVTSol-XuXzKSNUTZlSGcn4FRpRIbJESy6v0YjEr0SnKr1F467bxafknI1Qt7CbbZIbY2sLrj7jOcAxWe-DL79tu4eAlxEISX6wIVi3wXPbNtDhTxu2-C8W8Kz03oLHs9YZ6-DQ70rX4N4-GHD-E511sK27Qzem3Hdwf5kTtH7NV7NFsvx4e5-9LJOaaRqSVEiaCoCaVqxikjAlDK0MGKl4xqlhIuVNQ0hZV1ltOKNECi5KLYE2CqomnaCnwXv07dcJulDs2pN38WTBqNScE6JppMhA1b7tOg-mOHp7KP25oKToqy1itUVfbXGpNkYeh4gFgH9cCa20YOkvam93EQ
CODEN IETDAI
CitedBy_id crossref_primary_10_1364_OME_523230
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ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019
DBID 97E
RIA
RIE
AAYXX
CITATION
7SP
8FD
L7M
DOI 10.1109/TED.2018.2887074
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005-present
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE/IET Electronic Library
CrossRef
Electronics & Communications Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Technology Research Database
Advanced Technologies Database with Aerospace
Electronics & Communications Abstracts
DatabaseTitleList Technology Research Database
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library Online
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1557-9646
EndPage 982
ExternalDocumentID 10_1109_TED_2018_2887074
8598952
Genre orig-research
GrantInformation_xml – fundername: Ministry of Science and Technology, Taiwan
  grantid: MOST 105-2112-M-018-005-MY3
  funderid: 10.13039/501100004663
GroupedDBID -~X
.DC
0R~
29I
3EH
4.4
5GY
5VS
6IK
97E
AAJGR
AASAJ
ABQJQ
ABVLG
ACGFO
ACGFS
ACIWK
ACKIV
ACNCT
AENEX
AETIX
AI.
AIBXA
AKJIK
ALLEH
ALMA_UNASSIGNED_HOLDINGS
ASUFR
ATWAV
B-7
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
DU5
EBS
EJD
F5P
HZ~
H~9
IAAWW
IBMZZ
ICLAB
IDIHD
IFIPE
IFJZH
IPLJI
JAVBF
LAI
M43
MS~
O9-
OCL
P2P
RIA
RIE
RIG
RNS
TAE
TN5
VH1
VJK
VOH
XFK
AAYXX
CITATION
7SP
8FD
L7M
ID FETCH-LOGICAL-c291t-356135eec1b2b260285f1bfef684741f2534dd00acb7cf42106545a96e1d8ebd3
IEDL.DBID RIE
ISSN 0018-9383
IngestDate Thu Oct 10 19:02:25 EDT 2024
Fri Aug 23 02:32:47 EDT 2024
Wed Jun 26 19:28:04 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 2
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c291t-356135eec1b2b260285f1bfef684741f2534dd00acb7cf42106545a96e1d8ebd3
ORCID 0000-0002-0854-6257
0000-0001-5475-2513
PQID 2169440091
PQPubID 85466
PageCount 7
ParticipantIDs crossref_primary_10_1109_TED_2018_2887074
ieee_primary_8598952
proquest_journals_2169440091
PublicationCentury 2000
PublicationDate 2019-02-01
PublicationDateYYYYMMDD 2019-02-01
PublicationDate_xml – month: 02
  year: 2019
  text: 2019-02-01
  day: 01
PublicationDecade 2010
PublicationPlace New York
PublicationPlace_xml – name: New York
PublicationTitle IEEE transactions on electron devices
PublicationTitleAbbrev TED
PublicationYear 2019
Publisher IEEE
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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SSID ssj0016442
Score 2.434752
Snippet In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite...
SourceID proquest
crossref
ieee
SourceType Aggregation Database
Publisher
StartPage 976
SubjectTerms AlGaN
Aluminum gallium nitride
carrier confinement
Confinement
Light emitting diodes
light extraction
light-emitting diodes (LEDs)
Mathematical model
Optical polarization
Optical properties
Organic light emitting diodes
Parameter sensitivity
Physical properties
Piezoelectric polarization
polarization effect
Quantum efficiency
Quantum wells
Radiative recombination
Ultraviolet radiation
Wide band gap semiconductors
Title High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction
URI https://ieeexplore.ieee.org/document/8598952
https://www.proquest.com/docview/2169440091
Volume 66
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwELaACQbeiPKSBxYkXBLXduIRlaIKARMVbJEfF1EBbdW6EuLXYztJxWtgy2CfTj7fK3f3GaFTqoSiyjCiJSSEWSGIpCYhpaEsY0waFkFc7-5Ff8BunvjTEjpfzMIAQGw-g3b4jLV8Ozbz8KvsIucyl9wb3OVMympWa1Ex8H69QgZPvQL7tKspSSbywpuA0MOVt6nXqCRj31xQfFPllyGO3uV6A901fFVNJS_tudNt8_EDsvG_jG-i9TrMxJfVvdhCSzDaRmtfwAd30Cy0eJBehJAI85f4CmBCBq9uqmK13uHbCDLSexvG3mh8NRxbmOHHoXvGzTaHu2oaHr3DYXTQEw-MYDWyOFCvKODeu5tW8xO7aHDde-j2Sf0EAzFUpo50Qn7BAUyqqfapD815meoSSuG9GktLyjvM2iRRRmemZD5_FD4kU1JAanPQtrOHVkbjEewjrEQmlZC5BSiZVVzZxHLLqOZCW5GZFjprpFJMKqSNImYoiSy8BIsgwaKWYAvthENerKvPt4WOGjEWtSrOCpoKybylkunB37sO0aqnLatW7CO04qZzOPaRhtMn8Yp9ArqG0Vs
link.rule.ids 315,783,787,799,27938,27939,55088
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LTxsxEB4hONAe2lJaNRSKD71UqsOuY3vXRwRBARJORHBb-TGrRm0TlDgS6q-v7d2NCu2htz2sZ0cez2tn5jPAZ6alZtpyahRmlDspqWI2o7VlvOBcWZ5AXCc3cjTlV_fifgu-bmZhEDE1n2E_PqZavlvYdfxVdlIKVSoRDO6OiHFFM621qRkEz95gg-dBhUPi1RUlM3USjEDs4ir7LOhUVvAnTijdqvKXKU7-5eI1TDrOmraS7_21N3376xlo4_-y_gZetYEmOW1Oxh5s4fwtvPwDfnAfVrHJgw4TiEScwCTniA90-sMvdarXezJOMCPDn7PUHU3OZwuHK3I3899It8yTM72M196RODwYiEdGiJ47Eqk3FMjw0S-bCYp3ML0Y3p6NaHsJA7VM5Z4OYoYhEG1umAnJDytFnZsaaxn8Gs9rJgbcuSzT1hS25iGDlCEo00pi7ko0bvAetueLOX4AomWhtFSlQ6y500K7zAnHmRHSOFnYHnzppFI9NFgbVcpRMlUFCVZRglUrwR7sx03evNfubw8OOzFWrTKuKpZLxYOtUvnBv1cdw-7odjKuxpc31x_hRfiOahqzD2HbL9d4FOIObz6l4_Yb2P_UqA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=High-Efficiency+Deep-Ultraviolet+Light-Emitting+Diodes+With+Efficient+Carrier+Confinement+and+High+Light+Extraction&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Jih-Yuan+Chang&rft.au=Bo-Ting+Liou&rft.au=Man-Fang%2C+Huang&rft.au=Shih%2C+Ya-Hsuan&rft.date=2019-02-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0018-9383&rft.eissn=1557-9646&rft.volume=66&rft.issue=2&rft.spage=976&rft_id=info:doi/10.1109%2FTED.2018.2887074&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon