Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

• Published in: IEEE transactions on nuclear science Vol. 68; no. 7; pp. 1430 - 1435
• Main Authors: Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Breakdown; Burnout; Circuit design; Density measurement; Diode; Doping; Epitaxial growth; heavy ion; Ions; MOSFET; MOSFETs; power; Power system measurements; Schottky diodes; Silicon carbide; silicon carbide (SiC); single-event burnout (SEB); Voltage

Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations...