Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs - Ball, D. R.; Galloway, K. F.; Johnson, R. A.; Alles, M. L.; Sternberg, A. L.; Witulski, A. F.; Reed, R. A.; Schrimpf, R. D.; Hutson, J. M.; Lauenstein, J.-M. (IEEE transactions on nuclear science, 2021)
Keywords: Breakdown; Burnout; Circuit design; Density measurement; Diode; Doping; Epitaxial growth; heavy ion; Ions; MOSFET; MOSFETs; power; Power system measurements; Schottky diodes; Silicon carbide; silicon carbide (SiC); single-event burnout (SEB); Voltage