The Influence of Tensile Stress on Polyaniline as Strain Sensor
In this letter, we report a first-principles study to investigate the influence of tensile stress on HCl-doped emeraldine-base polyaniline (PANI-Cl) as strain sensors by means of dispersion-corrected density functional theory computations. Our results show that up to a strain of ~17%, the strain inc...
Saved in:
Published in | IEEE electron device letters Vol. 37; no. 12; pp. 1636 - 1638 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.12.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | In this letter, we report a first-principles study to investigate the influence of tensile stress on HCl-doped emeraldine-base polyaniline (PANI-Cl) as strain sensors by means of dispersion-corrected density functional theory computations. Our results show that up to a strain of ~17%, the strain increases linearly with the tensile stress. The analysis of the band gap changes and the density of states variations at Fermi level with tensile stress provide insight into the role that the tensile stress plays in affecting the conductivity of PANI-Cl. The sensitivity of PANI-Cl as strain sensors is also calculated, which show a stress dependence. We hope that our findings may open new opportunities in fabricating conducting polymer-based strain sensors. |
---|---|
AbstractList | In this letter, we report a first-principles study to investigate the influence of tensile stress on HCl-doped emeraldine-base polyaniline (PANI-Cl) as strain sensors by means of dispersion-corrected density functional theory computations. Our results show that up to a strain of ~17%, the strain increases linearly with the tensile stress. The analysis of the band gap changes and the density of states variations at Fermi level with tensile stress provide insight into the role that the tensile stress plays in affecting the conductivity of PANI-Cl. The sensitivity of PANI-Cl as strain sensors is also calculated, which show a stress dependence. We hope that our findings may open new opportunities in fabricating conducting polymer-based strain sensors. |
Author | Qiu-Hua Liang Dao-Guo Yang Rui-Shen Meng Guo-Qi Zhang Xian-Ping Chen Xiang Sun Jun-Ke Jiang Qun Yang |
Author_xml | – sequence: 1 givenname: Jun-Ke surname: Jiang fullname: Jiang, Jun-Ke – sequence: 2 givenname: Qiu-Hua surname: Liang fullname: Liang, Qiu-Hua – sequence: 3 givenname: Rui-Shen surname: Meng fullname: Meng, Rui-Shen – sequence: 4 givenname: Qun surname: Yang fullname: Yang, Qun – sequence: 5 givenname: Xiang surname: Sun fullname: Sun, Xiang – sequence: 6 givenname: Dao-Guo surname: Yang fullname: Yang, Dao-Guo – sequence: 7 givenname: Guo-Qi surname: Zhang fullname: Zhang, Guo-Qi – sequence: 8 givenname: Xian-Ping orcidid: 0000-0002-6332-0955 surname: Chen fullname: Chen, Xian-Ping |
BookMark | eNo9kEFLAzEQhYNUsK3eBS8Bz1tnskl2cxKpVQsFhdZz2O5OcMua1KQ99N93S4unOcz33oNvxAY-eGLsHmGCCOZpMXudCEA9ERplAeKKDVGpMgOl8wEbQiExyxH0DRultAFAKQs5ZM-rH-Jz77o9-Zp4cHxFPrUd8eUuUko8eP4VukPl2671xKt0elSt58ueC_GWXbuqS3R3uWP2_TZbTT-yxef7fPqyyGphcJf1a42GykjQTkpVitzIGlWtHFJerJ2olWlKIVERGbOuGjCOlNMomrrQAvIxezz3bmP421Pa2U3YR99PWiylRBAKZE_BmapjSCmSs9vY_lbxYBHsSZPtNdmTJnvR1EcezpGWiP7xQpWgEfIjkzli-w |
CODEN | EDLEDZ |
CitedBy_id | crossref_primary_10_1002_pi_5907 crossref_primary_10_3390_s22072741 crossref_primary_10_1021_acs_jpcc_7b04942 crossref_primary_10_1016_j_eml_2020_100998 |
Cites_doi | 10.1002/jcc.20495 10.1103/PhysRevB.41.7892 10.1063/1.2913246 10.1103/PhysRevE.79.061801 10.1109/LED.2015.2425046 10.1016/0925-4005(95)01725-9 10.1002/(SICI)1099-0488(20000101)38:1<194::AID-POLB22>3.0.CO;2-H 10.1016/j.snb.2011.11.054 10.1016/S0378-7753(01)00862-X 10.1016/j.snb.2009.01.028 10.1021/nl035122e 10.1016/S0379-6779(97)80661-3 10.1103/RevModPhys.73.701 10.1016/j.snb.2012.08.042 10.1021/ja028371y |
ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M |
DOI | 10.1109/LED.2016.2614702 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005–Present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library Online CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Technology Research Database |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library Online url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1558-0563 |
EndPage | 1638 |
ExternalDocumentID | 10_1109_LED_2016_2614702 7580610 |
Genre | orig-research |
GrantInformation_xml | – fundername: National Natural Science Foundation of China grantid: 51303033 funderid: 10.13039/501100001809 – fundername: Guangxi Natural Science Foundation grantid: 2014GXNSFCB118004 funderid: 10.13039/501100004607 |
GroupedDBID | -~X .DC 0R~ 29I 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACIWK ACNCT AENEX AETIX AFFNX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD HZ~ IBMZZ ICLAB IFIPE IFJZH IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RIG RNS TAE TN5 TWZ VH1 XFK AAYXX CITATION 7SP 8FD L7M |
ID | FETCH-LOGICAL-c291t-144d60a9406f44582394c15c5f1e37bf2c59d82415ee99bad09fe5f612dc76203 |
IEDL.DBID | RIE |
ISSN | 0741-3106 |
IngestDate | Thu Oct 10 19:00:27 EDT 2024 Fri Aug 23 03:01:34 EDT 2024 Wed Jun 26 19:22:18 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 12 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c291t-144d60a9406f44582394c15c5f1e37bf2c59d82415ee99bad09fe5f612dc76203 |
ORCID | 0000-0002-6332-0955 |
PQID | 1844102504 |
PQPubID | 85488 |
PageCount | 3 |
ParticipantIDs | ieee_primary_7580610 proquest_journals_1844102504 crossref_primary_10_1109_LED_2016_2614702 |
PublicationCentury | 2000 |
PublicationDate | 2016-Dec. 2016-12-00 20161201 |
PublicationDateYYYYMMDD | 2016-12-01 |
PublicationDate_xml | – month: 12 year: 2016 text: 2016-Dec. |
PublicationDecade | 2010 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE electron device letters |
PublicationTitleAbbrev | LED |
PublicationYear | 2016 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
References | ref13 ref12 ref15 ref14 ref11 ref10 ref2 ref1 ref8 ref7 ref9 ref4 mott (ref16) 2012 ref3 ref6 ref5 |
References_xml | – ident: ref11 doi: 10.1002/jcc.20495 – ident: ref12 doi: 10.1103/PhysRevB.41.7892 – ident: ref15 doi: 10.1063/1.2913246 – ident: ref7 doi: 10.1103/PhysRevE.79.061801 – ident: ref10 doi: 10.1109/LED.2015.2425046 – ident: ref2 doi: 10.1016/0925-4005(95)01725-9 – ident: ref13 doi: 10.1002/(SICI)1099-0488(20000101)38:1<194::AID-POLB22>3.0.CO;2-H – ident: ref4 doi: 10.1016/j.snb.2011.11.054 – year: 2012 ident: ref16 publication-title: Electronic Processes in Non-Crystalline Materials contributor: fullname: mott – ident: ref9 doi: 10.1016/S0378-7753(01)00862-X – ident: ref3 doi: 10.1016/j.snb.2009.01.028 – ident: ref5 doi: 10.1021/nl035122e – ident: ref14 doi: 10.1016/S0379-6779(97)80661-3 – ident: ref1 doi: 10.1103/RevModPhys.73.701 – ident: ref8 doi: 10.1016/j.snb.2012.08.042 – ident: ref6 doi: 10.1021/ja028371y |
SSID | ssj0014474 |
Score | 2.2612238 |
Snippet | In this letter, we report a first-principles study to investigate the influence of tensile stress on HCl-doped emeraldine-base polyaniline (PANI-Cl) as strain... |
SourceID | proquest crossref ieee |
SourceType | Aggregation Database Publisher |
StartPage | 1636 |
SubjectTerms | band gap Capacitive sensors Conducting polymers Conductivity Density functional theory First principles Photonic band gap Polyaniline Polyanilines Sensitivity Sensors Strain strain sensor Tensile stress |
Title | The Influence of Tensile Stress on Polyaniline as Strain Sensor |
URI | https://ieeexplore.ieee.org/document/7580610 https://www.proquest.com/docview/1844102504 |
Volume | 37 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LS8NAEF5qT3rwVcVqlT14EUy6STZN9iSiLVWsCG2ht5B9gVgSadOD_npnNw9EPXgLZBOWmdn5ZnZeCF3GCoAjENzRTBKHUh453IfzqJU0ZZk6ZtrUDk-eB-M5fVyEixa6bmphlFI2-Uy55tHG8mUuNuaqrA-2LcAPOOhbEWNlrVYTMaC07LgMCAl6hTQhScL6T8N7k8M1cMFboFF1gVJDkJ2p8ksRW3QZ7aFJva8yqeTN3RTcFZ8_Wjb-d-P7aLcyM_FtKRcHqKWyQ7TzrflgB92AhOCHekYJzjWemWT2pcJTWz-C8wy_5MuPNHs1pihO1-ZF-prhKazLV0doPhrO7sZONU7BET7zCgdIJAckZQDhmppwWcCo8EIRak8FEde-CJmMDaIrxRhPJWFahRpMIClAZZLgGLWzPFMnCHMWcukzqZTp8AZOiRfIQEsekhREQsRddFVTOHkvu2Yk1tsgLAFuJIYbScWNLuoYgjXrKlp1Ua9mSVIdq3UC7ij1bNe107-_OkPb5t9lvkkPtYvVRp2D1VDwCysuX4xGvU4 |
link.rule.ids | 315,783,787,799,27936,27937,55086 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LS8NAEB5KPagHX1WsVt2DF8G0eWza7ElELa22RWgLvYXsC4olkT4O-uudzQtRD94C2ZBlZna-mZ0XwHWgEDg8wS3NpG1RyjsWd_E8aiVNWaYOmDa1w8NRuzelzzN_VoHbshZGKZUmn6mmeUxj-TIRG3NV1kLbFuEHHfQttKuDdlatVcYMKM16LiNGomaxy6CkzVqDp0eTxdVuor9AO_kVSgFC6VSVX6o4xZfuPgyLnWVpJW_NzZo3xeePpo3_3foB7OWGJrnPJOMQKio-gt1v7QdrcIcyQvrFlBKSaDIx6ewLRcZpBQlJYvKaLD6ieG6MURKtzItoHpMxrkuWxzDtPk0eelY-UMESLnPWFpJItu2IIYhragJmHqPC8YWvHeV1uHaFz2RgMF0pxngkbaaVr9EIkgKVpu2dQDVOYnUKhDOfS5dJpUyPN3RLHE96WnLfjlAoRFCHm4LC4XvWNyNM_Q2bhciN0HAjzLlRh5ohWLkup1UdGgVLwvxgrUJ0SKmT9l07-_urK9juTYaDcNAfvZzDjvlPln3SgOp6uVEXaEOs-WUqOl-iQsCZ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+Influence+of+Tensile+Stress+on+Polyaniline+as+Strain+Sensor&rft.jtitle=IEEE+electron+device+letters&rft.au=Jun-Ke%2C+Jiang&rft.au=Qiu-Hua%2C+Liang&rft.au=Rui-Shen%2C+Meng&rft.au=Yang%2C+Qun&rft.date=2016-12-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0741-3106&rft.eissn=1558-0563&rft.volume=37&rft.issue=12&rft.spage=1636&rft_id=info:doi/10.1109%2FLED.2016.2614702&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0741-3106&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0741-3106&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0741-3106&client=summon |