The role of the split-off band in electron-hole energy exchange dynamics in selected III-V semiconductors

We report a Monte-Carlo investigation of Coulomb electron-hole scattering processes involving the split-off band in selected III-V semiconductors in the context of steady-state high-field minority-electron transport. Due to the small value of the relevant hole overlap factors, as well as the relativ...

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Published inJournal of applied physics Vol. 66; no. 5; pp. 2020 - 2026
Main Authors SADRA, K, MAZIAR, C. M, STREETMAN, B. G
Format Journal Article
LanguageEnglish
Published Woodbury, NY American Institute of Physics 01.09.1989
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
High-field and nonlinear effects
Physics
Monte Carlo method
Gallium Indium Arsenides Mixed
Minority carrier
Semiconductor materials
Indium Phosphides
Theoretical study
Band splitting
III-V compound
Inorganic compound
Coulomb scattering
Energy loss
Electric field
Charge carrier scattering
Energy transfer
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Abstract We report a Monte-Carlo investigation of Coulomb electron-hole scattering processes involving the split-off band in selected III-V semiconductors in the context of steady-state high-field minority-electron transport. Due to the small value of the relevant hole overlap factors, as well as the relative values of the Γ-L energy separation and the split-off energy, such processes do not make a significant contribution to the minority electron energy loss rate in In0.53Ga0.47As. In InP, however, the ΓhΓs process accounts for a significant fraction of the total Γ-electron energy loss to holes.
AbstractList We report a Monte-Carlo investigation of Coulomb electron-hole scattering processes involving the split-off band in selected III-V semiconductors in the context of steady-state high-field minority-electron transport. Due to the small value of the relevant hole overlap factors, as well as the relative values of the Γ-L energy separation and the split-off energy, such processes do not make a significant contribution to the minority electron energy loss rate in In0.53Ga0.47As. In InP, however, the ΓhΓs process accounts for a significant fraction of the total Γ-electron energy loss to holes.
Author MAZIAR, C. M
STREETMAN, B. G
SADRA, K
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  organization: Univ. Texas Austin, dep. electrical computer eng., Austin TX 78712, United States
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Issue 5
Keywords Monte Carlo method
Gallium Indium Arsenides Mixed
Minority carrier
Semiconductor materials
Indium Phosphides
Theoretical study
Band splitting
III-V compound
Inorganic compound
Coulomb scattering
Energy loss
Electric field
Charge carrier scattering
Energy transfer
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PublicationTitle Journal of applied physics
PublicationYear 1989
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SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
High-field and nonlinear effects
Physics
Title The role of the split-off band in electron-hole energy exchange dynamics in selected III-V semiconductors
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