The role of the split-off band in electron-hole energy exchange dynamics in selected III-V semiconductors

• Published in: Journal of applied physics Vol. 66; no. 5; pp. 2020 - 2026
• Main Authors: SADRA, K, MAZIAR, C. M, STREETMAN, B. G
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 01.09.1989
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; High-field and nonlinear effects; Physics; Monte Carlo method; Gallium Indium Arsenides Mixed; Minority carrier; Semiconductor materials; Indium Phosphides; Theoretical study; Band splitting; III-V compound; Inorganic compound; Coulomb scattering; Energy loss; Electric field; Charge carrier scattering; Energy transfer
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.344340

We report a Monte-Carlo investigation of Coulomb electron-hole scattering processes involving the split-off band in selected III-V semiconductors in the context of steady-state high-field minority-electron transport. Due to the small value of the relevant hole overlap factors, as well as the relative values of the Γ-L energy separation and the split-off energy, such processes do not make a significant contribution to the minority electron energy loss rate in In0.53Ga0.47As. In InP, however, the ΓhΓs process accounts for a significant fraction of the total Γ-electron energy loss to holes.