Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications

• Published in: InfoMat Vol. 3; no. 2; pp. 212 - 221
• Main Authors: Wang, Tian‐Yu, Meng, Jia‐Lin, Chen, Lin, Zhu, Hao, Sun, Qing‐Qing, Ding, Shi‐Jin, Bao, Wen‐Zhong, Zhang, David Wei
• Format: Journal Article
• Language: English
• Published: Melbourne John Wiley & Sons, Inc 01.02.2021; Wiley
• Subjects: 3D crossbar; brain‐inspired computing; flexible memory; low‐temperature ALD; multilevel storage

The demand of flexible neuromorphic computing electronics is increasing with the rapid development of wearable artificial intelligent devices. The flexible resistive random‐access memory (RRAM) is one excellent candidate of high‐density storage devices. However, due to the limitations of fabrication...