Fast response and multi-color photodetection in p-type Cu:CdS thin films

We present an analysis of p-type CdS thin films deposited on glass substrates with the addition of Cu dopants. Subsequently, we explore the photodetection capabilities of the Cu:CdS/FTO heterostructure. CdS, a popular and economical photo-conducting material operating within the spectral range simil...

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Published inMaterials advances Vol. 5; no. 4; pp. 1576 - 1587
Main Author Kumar, Pawan
Format Journal Article
LanguageEnglish
Published 19.02.2024
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Abstract We present an analysis of p-type CdS thin films deposited on glass substrates with the addition of Cu dopants. Subsequently, we explore the photodetection capabilities of the Cu:CdS/FTO heterostructure. CdS, a popular and economical photo-conducting material operating within the spectral range similar to that of the human eye, is the subject of our investigation in this work. Multicolor detection with improved sensitivity, speed, and stability remains relatively unexplored in CdS-based photodetectors. Also, the industrially beneficial spray pyrolysis technique is employed for the fabrication. Furthermore, we address the shortcomings of photodetection in the metal-semiconductor-metal structure by implementing a simple vertical heterojunction structure, p-Cu:CdS/n-FTO. Among the various Cu-doped CdS films evaluated for their optoelectronic applications, we have determined that the CdS film with a 10% Cu concentration is optimal for photodetection purposes. Low density of sulfur vacancies, proper chemical composition, and good crystallinity observed for the 10 at% Cu doped CdS film supported the excellent performance of the p-Cu 0.1 Cd 0.9 S/n-FTO photodetector. We present an analysis of p-type CdS thin films deposited on glass substrates with the addition of Cu dopants.
AbstractList We present an analysis of p-type CdS thin films deposited on glass substrates with the addition of Cu dopants. Subsequently, we explore the photodetection capabilities of the Cu:CdS/FTO heterostructure. CdS, a popular and economical photo-conducting material operating within the spectral range similar to that of the human eye, is the subject of our investigation in this work. Multicolor detection with improved sensitivity, speed, and stability remains relatively unexplored in CdS-based photodetectors. Also, the industrially beneficial spray pyrolysis technique is employed for the fabrication. Furthermore, we address the shortcomings of photodetection in the metal-semiconductor-metal structure by implementing a simple vertical heterojunction structure, p-Cu:CdS/n-FTO. Among the various Cu-doped CdS films evaluated for their optoelectronic applications, we have determined that the CdS film with a 10% Cu concentration is optimal for photodetection purposes. Low density of sulfur vacancies, proper chemical composition, and good crystallinity observed for the 10 at% Cu doped CdS film supported the excellent performance of the p-Cu 0.1 Cd 0.9 S/n-FTO photodetector. We present an analysis of p-type CdS thin films deposited on glass substrates with the addition of Cu dopants.
We present an analysis of p-type CdS thin films deposited on glass substrates with the addition of Cu dopants. Subsequently, we explore the photodetection capabilities of the Cu:CdS/FTO heterostructure. CdS, a popular and economical photo-conducting material operating within the spectral range similar to that of the human eye, is the subject of our investigation in this work. Multicolor detection with improved sensitivity, speed, and stability remains relatively unexplored in CdS-based photodetectors. Also, the industrially beneficial spray pyrolysis technique is employed for the fabrication. Furthermore, we address the shortcomings of photodetection in the metal–semiconductor–metal structure by implementing a simple vertical heterojunction structure, p-Cu:CdS/n-FTO. Among the various Cu-doped CdS films evaluated for their optoelectronic applications, we have determined that the CdS film with a 10% Cu concentration is optimal for photodetection purposes. Low density of sulfur vacancies, proper chemical composition, and good crystallinity observed for the 10 at% Cu doped CdS film supported the excellent performance of the p-Cu 0.1 Cd 0.9 S/n-FTO photodetector.
Author Kumar, Pawan
AuthorAffiliation Manipal Institute of Technology
Manipal Academy of Higher Education
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crossref_primary_10_1016_j_jphotochem_2024_115949
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Cites_doi 10.1016/j.ijleo.2018.02.031
10.1016/j.jallcom.2021.159479
10.1007/s11664-018-6437-9
10.1016/0022-3093(72)90194-9
10.1016/j.ijleo.2015.09.186
10.1016/j.matchemphys.2019.01.017
10.1007/978-3-662-33915-2_7
10.1016/j.ceramint.2019.10.196
10.1002/adma.201000144
10.1007/s10854-017-6384-x
10.1007/s00339-021-04704-5
10.1007/s00339-020-04067-3
10.1016/j.sna.2019.111749
10.1016/j.jallcom.2018.10.285
10.1103/PhysRev.92.1324
10.1016/j.apsusc.2012.01.131
10.1063/1.109181
10.1051/epjap/2016150414
10.1038/srep21551
10.1016/j.jpcs.2023.111282
10.1007/s10854-022-08132-w
10.1016/S0169-4332(01)00147-7
10.1016/j.mssp.2021.105933
10.1063/1.3387843
10.1039/c8ra07312k
10.5185/amlett.2014.1574
10.1002/adfm.201800181
10.1016/j.mssp.2016.09.006
10.1016/j.tsf.2012.12.040
10.1088/1361-648X/abf199
10.1007/s00339-021-04611-9
10.1016/j.apsusc.2016.10.200
10.1039/b906995j
10.1016/j.sna.2021.112890
10.1016/j.optlastec.2022.107868
10.1007/s10854-021-07006-x
10.1016/j.ijleo.2013.08.035
10.1016/j.sna.2020.111952
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References Sebastian (D3MA00678F/cit16/1) 1993; 62
Devi (D3MA00678F/cit3/1) 2020; 126
Chander (D3MA00678F/cit20/1) 2017; 28
Yahia (D3MA00678F/cit8/1) 2019; 776
Patel (D3MA00678F/cit9/1) 2014; 5
Khan (D3MA00678F/cit17/1) 2018; 47
Shkir (D3MA00678F/cit31/1) 2020; 46
Urbach (D3MA00678F/cit27/1) 1953; 92
Su (D3MA00678F/cit1/1) 2013; 532
Sharma (D3MA00678F/cit18/1) 2022; 33
Shkir (D3MA00678F/cit11/1) 2020; 306
Shkir (D3MA00678F/cit32/1) 2019; 301
Shkir (D3MA00678F/cit36/1) 2023; 177
Zhang (D3MA00678F/cit21/1) 2021
Wang (D3MA00678F/cit15/1) 2021; 133
Panda (D3MA00678F/cit14/1) 2012; 258
Shaban (D3MA00678F/cit2/1) 2016; 56
Husham (D3MA00678F/cit4/1) 2016; 74
Ferra-Gonzalez (D3MA00678F/cit10/1) 2014; 125
Chand (D3MA00678F/cit12/1) 2018; 161
Pei (D3MA00678F/cit35/1) 2016; 6
Moger (D3MA00678F/cit7/1) 2022; 149
Hanna (D3MA00678F/cit30/1) 2018
Lo (D3MA00678F/cit26/1) 2021; 32
Millot (D3MA00678F/cit23/1) 2010; 96
Muthusamy (D3MA00678F/cit25/1) 2015; 126
Waldiya (D3MA00678F/cit5/1) 2019; 226
Izgorodin (D3MA00678F/cit19/1) 2009
Tauc (D3MA00678F/cit24/1) 1972; 8
Panthakkal (D3MA00678F/cit13/1) 2017; 396
Scherrer (D3MA00678F/cit22/1) 1912
Deva Arun Kumar (D3MA00678F/cit38/1) 2021; 33
Li (D3MA00678F/cit33/1) 2010; 22
Moger (D3MA00678F/cit6/1) 2021; 870
Shkir (D3MA00678F/cit34/1) 2021; 331
Halge (D3MA00678F/cit28/1) 2021; 127
Abe (D3MA00678F/cit29/1) 2001; 176
Jin (D3MA00678F/cit37/1) 2018; 28
References_xml – volume: 161
  start-page: 44
  year: 2018
  ident: D3MA00678F/cit12/1
  publication-title: Optik
  doi: 10.1016/j.ijleo.2018.02.031
– volume: 870
  start-page: 159479
  year: 2021
  ident: D3MA00678F/cit6/1
  publication-title: J. Alloys Compd.
  doi: 10.1016/j.jallcom.2021.159479
– volume: 47
  start-page: 5386
  issue: 9
  year: 2018
  ident: D3MA00678F/cit17/1
  publication-title: J. Electron. Mater.
  doi: 10.1007/s11664-018-6437-9
– volume: 8
  start-page: 569
  issue: 10
  year: 1972
  ident: D3MA00678F/cit24/1
  publication-title: J. Non-Cryst. Solids
  doi: 10.1016/0022-3093(72)90194-9
– volume: 126
  start-page: 5200
  issue: 24
  year: 2015
  ident: D3MA00678F/cit25/1
  publication-title: Opt. - Int. J. Light Electron Opt.
  doi: 10.1016/j.ijleo.2015.09.186
– volume: 226
  start-page: 26
  year: 2019
  ident: D3MA00678F/cit5/1
  publication-title: Mater. Chem. Phys.
  doi: 10.1016/j.matchemphys.2019.01.017
– start-page: 387
  year: 1912
  ident: D3MA00678F/cit22/1
  publication-title: Kolloidchem. Ein Lehrb.
  doi: 10.1007/978-3-662-33915-2_7
– volume: 46
  start-page: 4652
  issue: 4
  year: 2020
  ident: D3MA00678F/cit31/1
  publication-title: Ceram. Int.
  doi: 10.1016/j.ceramint.2019.10.196
– volume: 22
  start-page: 3161
  issue: 29
  year: 2010
  ident: D3MA00678F/cit33/1
  publication-title: Adv. Mater.
  doi: 10.1002/adma.201000144
– volume: 28
  start-page: 6852
  year: 2017
  ident: D3MA00678F/cit20/1
  publication-title: J. Mater. Sci.: Mater. Electron.
  doi: 10.1007/s10854-017-6384-x
– start-page: 1
  year: 2021
  ident: D3MA00678F/cit21/1
  publication-title: Appl. Phys. A: Mater. Sci. Process.
  doi: 10.1007/s00339-021-04704-5
– volume: 126
  start-page: 1
  issue: 12
  year: 2020
  ident: D3MA00678F/cit3/1
  publication-title: Appl. Phys. A: Mater. Sci. Process.
  doi: 10.1007/s00339-020-04067-3
– volume: 301
  start-page: 111749
  year: 2019
  ident: D3MA00678F/cit32/1
  publication-title: Sens. Actuators, A
  doi: 10.1016/j.sna.2019.111749
– volume: 776
  start-page: 1056
  year: 2019
  ident: D3MA00678F/cit8/1
  publication-title: J. Alloys Compd.
  doi: 10.1016/j.jallcom.2018.10.285
– volume: 92
  start-page: 1324
  issue: 5
  year: 1953
  ident: D3MA00678F/cit27/1
  publication-title: Phys. Rev.
  doi: 10.1103/PhysRev.92.1324
– volume: 258
  start-page: 5086
  year: 2012
  ident: D3MA00678F/cit14/1
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2012.01.131
– volume: 62
  start-page: 2956
  year: 1993
  ident: D3MA00678F/cit16/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.109181
– volume: 74
  start-page: 1
  year: 2016
  ident: D3MA00678F/cit4/1
  publication-title: Eur. Phys. J. Appl. Phys.
  doi: 10.1051/epjap/2016150414
– volume: 6
  start-page: 1
  year: 2016
  ident: D3MA00678F/cit35/1
  publication-title: Nat. Publ. Gr.
  doi: 10.1038/srep21551
– volume: 177
  start-page: 111282
  issue: 2022
  year: 2023
  ident: D3MA00678F/cit36/1
  publication-title: J. Phys. Chem. Solids
  doi: 10.1016/j.jpcs.2023.111282
– volume: 33
  start-page: 11601
  issue: 14
  year: 2022
  ident: D3MA00678F/cit18/1
  publication-title: J. Mater. Sci.: Mater. Electron.
  doi: 10.1007/s10854-022-08132-w
– volume: 176
  start-page: 549
  year: 2001
  ident: D3MA00678F/cit29/1
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/S0169-4332(01)00147-7
– volume: 133
  start-page: 105933
  year: 2021
  ident: D3MA00678F/cit15/1
  publication-title: Mater. Sci. Semicond. Process.
  doi: 10.1016/j.mssp.2021.105933
– volume: 96
  start-page: 152103
  issue: 15
  year: 2010
  ident: D3MA00678F/cit23/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3387843
– start-page: 37365
  year: 2018
  ident: D3MA00678F/cit30/1
  publication-title: RSC Adv.
  doi: 10.1039/c8ra07312k
– volume: 5
  start-page: 671
  year: 2014
  ident: D3MA00678F/cit9/1
  publication-title: Adv. Mater. Lett.
  doi: 10.5185/amlett.2014.1574
– volume: 28
  start-page: 1
  issue: 20
  year: 2018
  ident: D3MA00678F/cit37/1
  publication-title: Adv. Funct. Mater.
  doi: 10.1002/adfm.201800181
– volume: 56
  start-page: 329
  year: 2016
  ident: D3MA00678F/cit2/1
  publication-title: Mater. Sci. Semicond. Process.
  doi: 10.1016/j.mssp.2016.09.006
– volume: 532
  start-page: 16
  year: 2013
  ident: D3MA00678F/cit1/1
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2012.12.040
– volume: 33
  start-page: 195901
  issue: 19
  year: 2021
  ident: D3MA00678F/cit38/1
  publication-title: J. Phys.: Condens. Matter
  doi: 10.1088/1361-648X/abf199
– volume: 127
  start-page: 1
  issue: 6
  year: 2021
  ident: D3MA00678F/cit28/1
  publication-title: Appl. Phys. A: Mater. Sci. Process.
  doi: 10.1007/s00339-021-04611-9
– volume: 396
  start-page: 582
  year: 2017
  ident: D3MA00678F/cit13/1
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2016.10.200
– start-page: 8532
  year: 2009
  ident: D3MA00678F/cit19/1
  publication-title: Phys. Chem. Chem. Phys.
  doi: 10.1039/b906995j
– volume: 331
  start-page: 112890
  year: 2021
  ident: D3MA00678F/cit34/1
  publication-title: Sens. Actuators, A
  doi: 10.1016/j.sna.2021.112890
– volume: 149
  start-page: 107868
  year: 2022
  ident: D3MA00678F/cit7/1
  publication-title: Opt. Laser Technol.
  doi: 10.1016/j.optlastec.2022.107868
– volume: 32
  start-page: 25462
  year: 2021
  ident: D3MA00678F/cit26/1
  publication-title: J. Mater. Sci.: Mater. Electron.
  doi: 10.1007/s10854-021-07006-x
– volume: 125
  start-page: 1533
  year: 2014
  ident: D3MA00678F/cit10/1
  publication-title: Optik
  doi: 10.1016/j.ijleo.2013.08.035
– volume: 306
  start-page: 111952
  year: 2020
  ident: D3MA00678F/cit11/1
  publication-title: Sens. Actuators, A
  doi: 10.1016/j.sna.2020.111952
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