Enhancement of the Chemical Stability of Hydrogenated Aluminum Nitride Thin Films by Nitrogen Plasma Treatment

Hydrogenated aluminium nitride (AlN:H) thin films were deposited on silicon (100) wafers by rf reactive magnetron sputtering. Although the as-deposited AlN:H films exhibited a smooth surface and low oxygen concentration, they are chemically unstable. The presence of N-H bonds is known to cause chemi...

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Published inElectrochemical and solid-state letters Vol. 4; no. 2; pp. F7 - F9
Main Authors Cho, Min-Hee, Kang, Youn-Seon, Kim, Hae-Yeol, Lee, Paul S., Lee, Jai-Young
Format Journal Article
LanguageEnglish
Published 01.02.2001
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Abstract Hydrogenated aluminium nitride (AlN:H) thin films were deposited on silicon (100) wafers by rf reactive magnetron sputtering. Although the as-deposited AlN:H films exhibited a smooth surface and low oxygen concentration, they are chemically unstable. The presence of N-H bonds is known to cause chemical instability and an increase of the etching rate in KOH solution. The AlN:H films, which are treated with nitrogen plasma generated by a microwave system, show a much lower etching rate than that of as-deposited AlN:H or even as-deposited AlN films. After nitrogen plasma treatment, the Al-N bonding density in AlN:H films has increased sharply, while N-H bonding density has decreased. It means that the hydrogen atoms in the films diffuse out during the process, so that more chemically-stable AlN:H films are formed. 21 refs.
AbstractList Hydrogenated aluminium nitride (AlN:H) thin films were deposited on silicon (100) wafers by rf reactive magnetron sputtering. Although the as-deposited AlN:H films exhibited a smooth surface and low oxygen concentration, they are chemically unstable. The presence of N-H bonds is known to cause chemical instability and an increase of the etching rate in KOH solution. The AlN:H films, which are treated with nitrogen plasma generated by a microwave system, show a much lower etching rate than that of as-deposited AlN:H or even as-deposited AlN films. After nitrogen plasma treatment, the Al-N bonding density in AlN:H films has increased sharply, while N-H bonding density has decreased. It means that the hydrogen atoms in the films diffuse out during the process, so that more chemically-stable AlN:H films are formed. 21 refs.
Hydrogenated aluminum nitride (AlN:H) thin films have been deposited on silicon (100) wafers by radio frequency reactive magnetron sputtering. Although the as-deposited AlN:H films exhibit smooth surface and low oxygen concentration, they are chemically unstable. The presence of N-H bonds is known to cause chemical instability and an increase of the etching rate in KOH solution. The AlN:H films, which are treated with nitrogen plasma generated by a microwave system, show a much lower etching rate than that of as-deposited AlN:H or even as-deposited AlN films. After nitrogen plasma treatment, the Al-N bonding density in AlN:H films has increased sharply, while N-H bonding density has decreased. It means that the hydrogen atoms in the films diffuse out during the process, so that more chemically-stable AlN:H films are formed.
Author Cho, Min-Hee
Lee, Jai-Young
Kang, Youn-Seon
Kim, Hae-Yeol
Lee, Paul S.
Author_xml – sequence: 1
  givenname: Min-Hee
  surname: Cho
  fullname: Cho, Min-Hee
– sequence: 2
  givenname: Youn-Seon
  surname: Kang
  fullname: Kang, Youn-Seon
– sequence: 3
  givenname: Hae-Yeol
  surname: Kim
  fullname: Kim, Hae-Yeol
– sequence: 4
  givenname: Paul S.
  surname: Lee
  fullname: Lee, Paul S.
– sequence: 5
  givenname: Jai-Young
  surname: Lee
  fullname: Lee, Jai-Young
BookMark eNqNkLFOwzAQhj0UiRYYeANPSAwttpMm8VhVLUWqAIkyR459Jka2U2xnyNvT0D4A0_26_9Od9M3QxHceELqnZEFpzp_ogmYZZzmdoCklnM8JKdg1msX4TU5xWdAp8hvfCi_BgU-40zi1gNctOCOFxR9JNMaaNIzNblCh-wIvEii8sr0zvnf41aRgFOBDazzeGusiboa_7cjidyuiE_gQQKTxxS260sJGuLvMG_S53RzWu_n-7fllvdrPJat4mlMtCSVZrmCpSVVS1TRakwYYISWXoilYWXJOpBJcLqFiFYhCqYbKTAuhc5HdoIfz3WPofnqIqXYmSrBWeOj6WLOiYkXBs_-BNGcn8PEMytDFGEDXx2CcCENNST3qrml90Z39At5jd20
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ContentType Journal Article
DBID AAYXX
CITATION
7QQ
8FD
JG9
8BQ
DOI 10.1149/1.1339241
DatabaseName CrossRef
Ceramic Abstracts
Technology Research Database
Materials Research Database
METADEX
DatabaseTitle CrossRef
Materials Research Database
Technology Research Database
Ceramic Abstracts
METADEX
DatabaseTitleList Materials Research Database
Materials Research Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Chemistry
Editor WCA
Editor_xml – fullname: WCA
EndPage F9
ExternalDocumentID 10_1149_1_1339241
GroupedDBID -~X
0R~
29G
5GY
6TJ
AAGCD
AATNI
AAYXX
ABJNI
ABTAH
ACHIP
AI.
AKPSB
ALMA_UNASSIGNED_HOLDINGS
AOAED
CITATION
CJUJL
CS3
DU5
EBS
EJD
H13
H~9
IOP
JGOPE
KOT
L7B
N5L
P2P
REC
RNS
ROL
RPA
TN5
UPT
VH1
ZY4
7QQ
8FD
JG9
8BQ
ID FETCH-LOGICAL-c289t-1fc01034de5f0871dbbff0be20079cab6277990cda9c5e828ea6ddb1c3faaf4a3
ISSN 1099-0062
IngestDate Fri Aug 16 07:54:41 EDT 2024
Fri Aug 16 07:54:02 EDT 2024
Fri Aug 23 00:17:44 EDT 2024
IsPeerReviewed false
IsScholarly false
Issue 2
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c289t-1fc01034de5f0871dbbff0be20079cab6277990cda9c5e828ea6ddb1c3faaf4a3
Notes ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
PQID 26826142
PQPubID 23500
ParticipantIDs proquest_miscellaneous_26826693
proquest_miscellaneous_26826142
crossref_primary_10_1149_1_1339241
PublicationCentury 2000
PublicationDate 2001-02-01
PublicationDateYYYYMMDD 2001-02-01
PublicationDate_xml – month: 02
  year: 2001
  text: 2001-02-01
  day: 01
PublicationDecade 2000
PublicationTitle Electrochemical and solid-state letters
PublicationYear 2001
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SSID ssj0006561
Score 1.3191929
Snippet Hydrogenated aluminium nitride (AlN:H) thin films were deposited on silicon (100) wafers by rf reactive magnetron sputtering. Although the as-deposited AlN:H...
Hydrogenated aluminum nitride (AlN:H) thin films have been deposited on silicon (100) wafers by radio frequency reactive magnetron sputtering. Although the...
SourceID proquest
crossref
SourceType Aggregation Database
StartPage F7
Title Enhancement of the Chemical Stability of Hydrogenated Aluminum Nitride Thin Films by Nitrogen Plasma Treatment
URI https://search.proquest.com/docview/26826142
https://search.proquest.com/docview/26826693
Volume 4
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3fb9MwELbKeAAeEAzQNrZhId4ql_xO8zhVqzIQA2mdNJ4iO7a1SFuC2lTa-Ou5c2IvhUkMXqLKdZLW9-l8d_7ujpAPQqtQTLOY6amfsChNPcZTjIhFcRnyRMUZx3znL6dJfh59uogvRqObAWtp3YpJ-fPevJL_kSqMgVwxS_YfJOseCgPwGeQLV5AwXB8k4-P6EoVmz_PRhnQFAMCKNLxXc4Ke38plA4_haF8egT6qkAB_WrXLSirTu3M8r66uV2iM4ijOxX5Gq2s-Xlgq-kYQv-ueUw7LDcB_rSQzGUrjK5Ml5Oz12WXTcfRrlisHpc99rBo1DjtTQ0KAQWnOFfuuGscB6UlDSGYcn0024hW-pTg7FYs1QTF1c6iDowHUgoE-naf3q_kIq6T6E3CwwX_07_Yye37_2xbniIddGnZW-EV_6yPyOEizGN32k6_f3B4OVq5x1e1v7WtSwa0f3Vs3LZnNjdxYJ4sX5HnvVtCjDiMvyUjV2-TJzHbz2ybPBoUnX5F6gBzaaArIoRY51CEHvxkih1rk0B45FJFDDXKouKUWObRDDnXIeU3O58eLWc76zhusBAe8Zb4usf9HJFWsPXCppRBae0JhYDsruUiCNAUzppQ8K2MFTrviiZTCL0PNuY54-IZs1U2tdghVMARqXsopGL9ZEHCeRV6Y6hjmTbmX7JL3dhWLH12BleIPKe2Sd3Z9C1g3PNPitWrWqyJIwD_2o-AvM5Is3HvIi96Sp3eY3Sdb7XKtDsDqbMWhAcgvCKGFvA
link.rule.ids 315,786,790,27957,27958
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Enhancement+of+the+Chemical+Stability+of+Hydrogenated+Aluminum+Nitride+Thin+Films+by+Nitrogen+Plasma+Treatment&rft.jtitle=Electrochemical+and+solid-state+letters&rft.au=Cho%2C+Min-Hee&rft.au=Kang%2C+Youn-Seon&rft.au=Kim%2C+Hae-Yeol&rft.au=Lee%2C+Paul+S.&rft.date=2001-02-01&rft.issn=1099-0062&rft.volume=4&rft.issue=2&rft.spage=F7&rft_id=info:doi/10.1149%2F1.1339241&rft.externalDBID=n%2Fa&rft.externalDocID=10_1149_1_1339241
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1099-0062&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1099-0062&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1099-0062&client=summon