Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films
The systematic variations in the structural, optical, and electrical properties of polycrystalline Cu(In,Ga)Se2 (CIGS) thin films with Na doping level were investigated. Precise control of the Na concentration in CIGS films was demonstrated using alkali-silicate glass thin layers of various thicknes...
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| Published in | Journal of applied physics Vol. 106; no. 3 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2009
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| Online Access | Get full text |
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| Abstract | The systematic variations in the structural, optical, and electrical properties of polycrystalline Cu(In,Ga)Se2 (CIGS) thin films with Na doping level were investigated. Precise control of the Na concentration in CIGS films was demonstrated using alkali-silicate glass thin layers of various thicknesses deposited on substrates prior to CIGS growth. The CIGS grain size was observed to decrease with increasing Na concentration, although the surface morphology became smoother and exhibited a stronger (112) texture, which has been demonstrated consequence of larger grain size. The Ga composition gradient in the CIGS films was found to become large due to the presence of Na during growth, which in turn led to a decrease in the nominal band gap energy. Variations in the photoluminescence spectra and electrical properties suggested that the formation of an acceptor energy state, which may originate from OSe point defects, was enhanced in the presence of Na. This result suggests that not only Na, but also the presence of O in combination with Na contributes to the compensation of point defects and enhances p-type conductivity in CIGS films. |
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| AbstractList | The systematic variations in the structural, optical, and electrical properties of polycrystalline Cu(In,Ga)Se2 (CIGS) thin films with Na doping level were investigated. Precise control of the Na concentration in CIGS films was demonstrated using alkali-silicate glass thin layers of various thicknesses deposited on substrates prior to CIGS growth. The CIGS grain size was observed to decrease with increasing Na concentration, although the surface morphology became smoother and exhibited a stronger (112) texture, which has been demonstrated consequence of larger grain size. The Ga composition gradient in the CIGS films was found to become large due to the presence of Na during growth, which in turn led to a decrease in the nominal band gap energy. Variations in the photoluminescence spectra and electrical properties suggested that the formation of an acceptor energy state, which may originate from OSe point defects, was enhanced in the presence of Na. This result suggests that not only Na, but also the presence of O in combination with Na contributes to the compensation of point defects and enhances p-type conductivity in CIGS films. |
| Author | Islam, Muhammad Monirul Sakurai, Takeaki Niki, Shigeru Ishizuka, Shogo Fons, Paul Yamada, Akimasa Akimoto, Katsuhiro Shibata, Hajime |
| Author_xml | – sequence: 1 givenname: Shogo surname: Ishizuka fullname: Ishizuka, Shogo – sequence: 2 givenname: Akimasa surname: Yamada fullname: Yamada, Akimasa – sequence: 3 givenname: Muhammad Monirul surname: Islam fullname: Islam, Muhammad Monirul – sequence: 4 givenname: Hajime surname: Shibata fullname: Shibata, Hajime – sequence: 5 givenname: Paul surname: Fons fullname: Fons, Paul – sequence: 6 givenname: Takeaki surname: Sakurai fullname: Sakurai, Takeaki – sequence: 7 givenname: Katsuhiro surname: Akimoto fullname: Akimoto, Katsuhiro – sequence: 8 givenname: Shigeru surname: Niki fullname: Niki, Shigeru |
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