Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process

• Published in: Chinese physics B Vol. 24; no. 12; p. 127305
• Main Authors: Qi, Lu-Wei, Yang, Hong, Ren, Shang-Qing, Xu, Ye-Feng, Luo, Wei-Chun, Xu, Hao, Wang, Yan-Rong, Tang, Bo, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun
• Format: Journal Article
• Language: English
• Published: 01.12.2015
• Subjects: Activation energy; Bias; Capping; Energy distribution; Gates; Instability; Stability; Stresses

The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stres...