Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process - Qi, Lu-Wei; Yang, Hong; Ren, Shang-Qing; Xu, Ye-Feng; Luo, Wei-Chun; Xu, Hao; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; et al. (Chinese physics B, 2015)
Keywords: Activation energy; Bias; Capping; Energy distribution; Gates; Instability; Stability; Stresses