Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching

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Published inActa physica Polonica, A Vol. 121; no. 1; pp. 71 - 73
Main Authors Al-Heuseen, K., Hashim, M.R.
Format Journal Article
LanguageEnglish
Published 01.01.2012
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Author Al-Heuseen, K.
Hashim, M.R.
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CitedBy_id crossref_primary_10_3390_nano9030440
crossref_primary_10_1039_D0NJ00101E
crossref_primary_10_1016_j_matpr_2020_12_729
crossref_primary_10_1016_j_mssp_2020_105631
crossref_primary_10_1149_2162_8777_ac7f59
Cites_doi 10.1088/0268-1242/19/11/008
10.1016/0038-1101(75)90031-3
10.1063/1.120023
10.1149/1.2434201
10.1063/1.124337
10.1063/1.118837
10.1016/S0022-0248(96)00576-3
10.1557/PROC-162-515
10.1063/1.1748855
10.1088/0268-1242/13/9/013
10.1063/1.362677
10.1063/1.97359
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Title Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching
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