CdS sensitized ZnO electrodes in photoelectrochemical cells

Abstract In this work, ZnO nanocrystalline thin films were obtained by evaporating Zn films using a thermal evaporation technique and then thermal treatment. The results show that after annealing at 300, 350, 400 and 450 ° C for 6 h, the obtained ZnO thin films have macro-structures. The results sho...

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Published inAdvances in natural sciences. Nanoscience and nanotechnology Vol. 1; no. 3; p. 035010
Main Authors Dang, Tran Chien, Pham, Duy Long, Nguyen, Huu Lam, Pham, Van Hoi
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2010
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Abstract Abstract In this work, ZnO nanocrystalline thin films were obtained by evaporating Zn films using a thermal evaporation technique and then thermal treatment. The results show that after annealing at 300, 350, 400 and 450 ° C for 6 h, the obtained ZnO thin films have macro-structures. The results show that at an annealing temperature of 450 ° C , the ZnO thin film has the best optical properties for photo-electrodes. The incorporation of cadmium sulfide (CdS) into ZnO macro-structure thin films was investigated. A CdS thin film was vacuum-deposited onto the pre-deposited ZnO film by the thermal evaporation technique. The obtained ZnO and ZnO/CdS bilayer films were characterized by x-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The ZnO/CdS bilayer film was used in a photoelectrochemical (PEC) cell as a working electrode and a platinum electrode as a counter electrode. The electrolyte solution contained 1 M KCl and 0.1  M Na 2 S . The results show that the cell with the ZnO/CdS bilayer electrode had significantly improved photoelectric properties in comparison with that of the pure ZnO thin films. The best thickness of the CdS thin film deposited on ITO/ZnO substrates was around 70 nm.
AbstractList Abstract In this work, ZnO nanocrystalline thin films were obtained by evaporating Zn films using a thermal evaporation technique and then thermal treatment. The results show that after annealing at 300, 350, 400 and 450 ° C for 6 h, the obtained ZnO thin films have macro-structures. The results show that at an annealing temperature of 450 ° C , the ZnO thin film has the best optical properties for photo-electrodes. The incorporation of cadmium sulfide (CdS) into ZnO macro-structure thin films was investigated. A CdS thin film was vacuum-deposited onto the pre-deposited ZnO film by the thermal evaporation technique. The obtained ZnO and ZnO/CdS bilayer films were characterized by x-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The ZnO/CdS bilayer film was used in a photoelectrochemical (PEC) cell as a working electrode and a platinum electrode as a counter electrode. The electrolyte solution contained 1 M KCl and 0.1  M Na 2 S . The results show that the cell with the ZnO/CdS bilayer electrode had significantly improved photoelectric properties in comparison with that of the pure ZnO thin films. The best thickness of the CdS thin film deposited on ITO/ZnO substrates was around 70 nm.
Author Dang, Tran Chien
Pham, Van Hoi
Pham, Duy Long
Nguyen, Huu Lam
Author_xml – sequence: 1
  fullname: Dang, Tran Chien
– sequence: 2
  fullname: Pham, Duy Long
– sequence: 3
  fullname: Nguyen, Huu Lam
– sequence: 4
  fullname: Pham, Van Hoi
BookMark eNp9UMFKxDAUDLKC67p_4CF3qX1J2tcUT1J0FRb2oF68hDZJ2Ui3KU0v-vW2dFkExXeZxzAzMHNJFq1vLSHXDG4ZSBlzSESEHHnMYhGDSIHBGVme6MWP_4KsQ_iA8YTMUcCS3BXmhQbbBje4L2voe7ujtrF66L2xgbqWdns_-COl9_bgdNlQbZsmXJHzumyCXR9xRd4eH16Lp2i72zwX99tIcykhShmmuRSgkxKriqGQoHWFCHWaIZPIrUZd5VgyUwmpWSYk1kYmmbFJzjMjViSZc3XvQ-htrbreHcr-UzFQ0wZqKqimgoopoeYNRtvNbHO-Ozn-UqrO1KM6_q3-N_8bdLFqpg
CitedBy_id crossref_primary_10_1088_0957_4484_27_35_355704
crossref_primary_10_1016_j_apsusc_2015_03_134
crossref_primary_10_1007_s10008_013_2139_7
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ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1088/2043-6262/1/3/035010
DatabaseName CrossRef
DatabaseTitle CrossRef
DatabaseTitleList CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 2043-6262
ExternalDocumentID 10_1088_2043_6262_1_3_035010
GroupedDBID 1JI
1WK
4.4
5VS
AAJIO
AALHV
AAPBV
ABHWH
ADACO
AEFHF
AFYNE
ALMA_UNASSIGNED_HOLDINGS
ASPBG
ATQHT
AVWKF
AZFZN
BBWZM
CJUJL
EBS
EDWGO
EJD
EQZZN
FEDTE
FRP
GROUPED_DOAJ
GX1
HH5
HVGLF
IOP
IZVLO
KNG
KOT
KQ8
M45
M48
N5L
NT-
O3W
OK1
Q02
RIN
RNS
RPA
SY9
T37
W28
AAGCD
AATNI
AAYXX
ACAFW
ACHIP
AEJGL
AERVB
AIYBF
AKPSB
CITATION
IJHAN
JCGBZ
PJBAE
ID FETCH-LOGICAL-c2880-51659830c4a6bb16380ccb660f5761862ec6cb96a1db38c17386fd847de4927d3
IEDL.DBID M48
ISSN 2043-6262
IngestDate Thu Sep 26 18:49:53 EDT 2024
Mon May 13 16:00:20 EDT 2019
Tue Nov 10 14:26:21 EST 2020
IsDoiOpenAccess false
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 3
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c2880-51659830c4a6bb16380ccb660f5761862ec6cb96a1db38c17386fd847de4927d3
OpenAccessLink https://iopscience.iop.org/article/10.1088/2043-6262/1/3/035010/pdf
ParticipantIDs iop_primary_10_1088_2043_6262_1_3_035010
crossref_primary_10_1088_2043_6262_1_3_035010
PublicationCentury 2000
PublicationDate 20100901
PublicationDateYYYYMMDD 2010-09-01
PublicationDate_xml – month: 09
  year: 2010
  text: 20100901
  day: 01
PublicationDecade 2010
PublicationTitle Advances in natural sciences. Nanoscience and nanotechnology
PublicationYear 2010
Publisher IOP Publishing
Publisher_xml – name: IOP Publishing
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SSID ssj0000389630
Score 1.9191588
Snippet Abstract In this work, ZnO nanocrystalline thin films were obtained by evaporating Zn films using a thermal evaporation technique and then thermal treatment....
SourceID crossref
iop
SourceType Aggregation Database
Enrichment Source
Publisher
StartPage 035010
SummonAdditionalLinks – databaseName: IOP Publishing (Open access)
  dbid: O3W
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3PS8MwFA46EfQgOhXnL3LYwUtc06ZZiicZjiHoDjocXkJ-FXdpi60X_3pf2jon7LBbCa8pfG3zvi_v5T2E-ipVVLggJibUjjBqOQEJFhABZN1YZR03PqL79MwnM_Y4j-d_QnGRF-3KfwuXdSTfH94kQLvDAR1EgzoQBhJ9Jxxy5ls1TKO35Z6KLxbH6_Yiy5t-T8uBzls30T9vtA2PXHEu40N00LJCfN-8xiO05bIu2l-pFdhFu3WupimP0d3IvuDSJ55Xi29n8Xs2xW03G-tKvMhw8ZFXeTtk2ooA2G_RlydoNn54HU1I2wMBwINfi8SUx4mIAsMU19qTp8AYzXmQglCgIEec4UYnXFGrI2Go7-GZWnA51rEkHNroFHWyPHNnCMcKsA-1ikxoWMJ0wgTwq6EBBWTSRIseIr9YyKIpdSHrELUQ0mMnPXaSykg22PXQDQC2oWl_1XSdiSxser75jBdor4nj-2yvS9SpPr_cFdCDSl_X38QPI8SrLQ
  priority: 102
  providerName: IOP Publishing
Title CdS sensitized ZnO electrodes in photoelectrochemical cells
URI http://iopscience.iop.org/2043-6262/1/3/035010
Volume 1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1NS8NAEF3aiqAH0apYP0oOPXiJzSab7QYRkWKpglbQYvGyZD-CBUliE0H99c4mqVSooJccwiaEt9nMe5nZeQh1wijETDu-LV2hbYIVtUGCOTYDsi5VqDSVJqN7c0uHY3I98Sc1NPdsrQDMlko74yc1nr2cvL9-nMOCPysr5FjXbO-0gZi7Xdz1ukWqDET8iktAq5tivorwF99miM-0MCD5vmi-n-6XG_2IV_Vpki6En8Em2qh4o3VRTvQWqum4idYXugk20WpRzSmzbXTaV_dWZkrT8-mnVtZTPLIqvxulM2saW-lzkifVKVn1DLDMT_xsB40Hlw_9oV25JAC8sPhsH1M_YJ4jSUiFMPTKkVJQ6kQgJTAIFi2pFAENsRIek9i4fEYKgpLSJHB7yttFjTiJ9R6y_BBmxxWhJ11JAiICwoCB9SRoJBkFgrWQPceCp2UzDF4ksRnjBjtusOOYe7zEroWOAbA_Du0sDl02hKcq2v_nExygtTLdb4rCDlEjn73pI2ARuWij-tXorl28HnAceY9faoq7RA
link.rule.ids 315,783,787,1560,2228,24330,27640,27936,27937,53918,53944
linkProvider Scholars Portal
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8NAEB7aiqIHH1WxPnPowUuabB7bDZ6kWlofbUELxcuSfQSLkBSbXvrr3U3SUkWh4C2E2WXzbZKZ2flmBqAeRiEi0vZN7jBpekhgU7lgtkmUsc5FKCTmOqL73MOdofcw8kclaC1zYZJJ8etvqMu8UHAOYUGII5bO5jSVHe5YyHKtLDJmWxMRlWHDdwOkeV3d_mB50KIryOGs58hy4CKF7o_JvqmoslrGisZp74FYrDUnmnw0Zilr8PmPMo7_fJh92C0sUuM2H3IAJRlXYWelTmEVNjOeKJ8ewk1LvBhTTXpPx3MpjLe4bxSddIScGuPYmLwnaVLc4kU1AkOHB6ZHMGzfv7Y6ZtF_QW2c-qxNH2E_IK7NvRAzpg03m3OGsR0pJwUpV0hyzFmAQySYSzjS_UMjodSdkF7gNIV7DJU4ieUJGH6o9t1hocsd7gUeCzyibLsmV94XjwJGamAuIKeTvMwGzcLjhFANEdUQUURdmkNUg2uF6Jqi9VXR30SoAvx0_RmvYGtw16ZP3d7jGWzndAJNOjuHSvo5kxfKSknZZfYWfgGs29Ub
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=CdS+sensitized+ZnO+electrodes+in+photoelectrochemical+cells&rft.jtitle=Advances+in+natural+sciences.+Nanoscience+and+nanotechnology&rft.au=Dang%2C+Tran+Chien&rft.au=Pham%2C+Duy+Long&rft.au=Nguyen%2C+Huu+Lam&rft.au=Pham%2C+Van+Hoi&rft.date=2010-09-01&rft.issn=2043-6262&rft.eissn=2043-6262&rft.volume=1&rft.issue=3&rft.spage=35010&rft_id=info:doi/10.1088%2F2043-6262%2F1%2F3%2F035010&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_2043_6262_1_3_035010
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2043-6262&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2043-6262&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2043-6262&client=summon