Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes

• Published in: Applied physics letters Vol. 125; no. 22
• Main Authors: Liu, Y., Jin, X., Jung, H., Lee, S., Harun, F., Ng, J. S., Krishna, S., David, J. P. R.
• Format: Journal Article
• Language: English
• Published: 25.11.2024

The application of an electric field to a semiconductor can alter its absorption properties. This electroabsorption effect can have a significant impact on the quantum efficiency of detector structures. The photocurrents in bulk InGaAs and GaAsSb p-i-n photodiodes with intrinsic absorber layer thick...