Tunneling field-effect transistors with two-dimensional BiN as the channel semiconductor - Yan, Saichao; Wang, Kang; Guo, Zhixin; Wu, Yu-Ning; Chen, Shiyou (Applied physics letters, 2024)
Keywords: Competitive materials; Delay time; Field effect transistors; First principles; Metal oxide semiconductors; MOSFETs; Power consumption; Power management; Semiconductor devices; Semiconductor materials; Transistors