Optical and electronic properties of (InxGa1−x)2O3 alloys

• Published in: Journal of applied physics Vol. 137; no. 3
• Main Authors: Shrestha, Bishal, Mainali, Madan K., Dulal, Prabin, Jamarkattel, Manoj K., Quader, Abdul, Bastola, Ebin, Phillips, Adam B., Heben, Michael J., Podraza, Nikolas J.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.01.2025
• Subjects: Carrier density; Carrier transport; Chemical bonds; Current carriers; Electrical measurement; Electromagnetism; Gallium oxides; Hall effect; Measurement techniques; Optical properties; Optoelectronic devices; Photovoltaic cells; Spectroellipsometry; Spectroscopic analysis; Thin films; Transport properties; Vibration mode

Indium gallium oxide [(InxGa1−x)2O3] alloys are of interest for a variety opto-electronic applications including photovoltaic devices owing to the ability to control properties through alloy composition. A thorough evaluation of the opto-electronic properties of (InxGa1−x)2O3 (x = 0.71, 0.55, 0.45,...