A fundamental study of improving thermal interface connection by using silane modified, in-situ formed silver-graphene fillers in epoxy polymers for future semiconductor device packaging
Over the past half-century, the increase of on-chip power and on-chip integration density has created new thermal management challenges for 2.5D/3D semiconductor packaging. High-performance thermal management materials in electronic encapsulation are very important to ensure the performance and reli...
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Published in | Composites science and technology Vol. 230; p. 109759 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
10.11.2022
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Subjects | |
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Abstract | Over the past half-century, the increase of on-chip power and on-chip integration density has created new thermal management challenges for 2.5D/3D semiconductor packaging. High-performance thermal management materials in electronic encapsulation are very important to ensure the performance and reliability of the electronic devices. Graphene-based polymer composites have attracted much attention due to the ultrahigh thermal conductivity and large surface area of graphene. However, graphene nanosheets easily aggregate and lack functional groups on their surfaces, leading to phonon scattering within the interfaces. In this work, silver nanoparticles are in-situ formed on the graphene surface by a facile method, then the graphene-silver nanofillers are modified by (3-Mercaptopropyl)trimethoxysilane (MPTS). MPTS reacts with silver nanoparticles to connect them with epoxy. Also, silver nanoparticles on the surface of graphene can fuse together to form metallurgical joints that connect graphene nanosheets.
With the fundamental understanding of sintering mechanisms and reducing two types of thermal interfacial resistances (filler-filler and filler-epoxy interface resistances) simultaneously, the resultant epoxy nanocomposites achieve a high through-plane thermal conductivity of 0.99 W/mK at 8 wt% loading. This corresponds to a 465.7% increase in thermal conductivity as compared to that of neat epoxy. Also, the nanocomposites present a low CTE and high thermal stability. They show strong cooling capability and heat dissipation as thermal interface materials (TIMs) through both experimentation and simulation, providing a promising new insight into thermal management materials to meet the demands of next generation high-power and high-density semiconductor packaging.
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•Thermal interfacial resistance between epoxy and graphene have been demonstrated.•Sintering mechanisms of silver-graphene fillers have been investigated.•Modified graphene fillers can greatly enhance thermal conductivity of epoxy.•Performance of TIMs have been demonstrated by experimentation and simulation. |
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AbstractList | Over the past half-century, the increase of on-chip power and on-chip integration density has created new thermal management challenges for 2.5D/3D semiconductor packaging. High-performance thermal management materials in electronic encapsulation are very important to ensure the performance and reliability of the electronic devices. Graphene-based polymer composites have attracted much attention due to the ultrahigh thermal conductivity and large surface area of graphene. However, graphene nanosheets easily aggregate and lack functional groups on their surfaces, leading to phonon scattering within the interfaces. In this work, silver nanoparticles are in-situ formed on the graphene surface by a facile method, then the graphene-silver nanofillers are modified by (3-Mercaptopropyl)trimethoxysilane (MPTS). MPTS reacts with silver nanoparticles to connect them with epoxy. Also, silver nanoparticles on the surface of graphene can fuse together to form metallurgical joints that connect graphene nanosheets.
With the fundamental understanding of sintering mechanisms and reducing two types of thermal interfacial resistances (filler-filler and filler-epoxy interface resistances) simultaneously, the resultant epoxy nanocomposites achieve a high through-plane thermal conductivity of 0.99 W/mK at 8 wt% loading. This corresponds to a 465.7% increase in thermal conductivity as compared to that of neat epoxy. Also, the nanocomposites present a low CTE and high thermal stability. They show strong cooling capability and heat dissipation as thermal interface materials (TIMs) through both experimentation and simulation, providing a promising new insight into thermal management materials to meet the demands of next generation high-power and high-density semiconductor packaging.
[Display omitted]
•Thermal interfacial resistance between epoxy and graphene have been demonstrated.•Sintering mechanisms of silver-graphene fillers have been investigated.•Modified graphene fillers can greatly enhance thermal conductivity of epoxy.•Performance of TIMs have been demonstrated by experimentation and simulation. |
ArticleNumber | 109759 |
Author | Sun, Zhijian An, Dong Li, Jiaxiong Liu, Huilong Wong, Ryan Liu, Yifan Muslu, Ahmet Mete Yu, Michael Moran, Macleary Wong, Ching-Ping |
Author_xml | – sequence: 1 givenname: Zhijian surname: Sun fullname: Sun, Zhijian organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 2 givenname: Ryan surname: Wong fullname: Wong, Ryan organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 3 givenname: Yifan orcidid: 0000-0001-5102-0552 surname: Liu fullname: Liu, Yifan organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 4 givenname: Michael orcidid: 0000-0002-8329-1637 surname: Yu fullname: Yu, Michael organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 5 givenname: Jiaxiong surname: Li fullname: Li, Jiaxiong organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 6 givenname: Huilong surname: Liu fullname: Liu, Huilong organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 7 givenname: Dong surname: An fullname: An, Dong organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 8 givenname: Macleary surname: Moran fullname: Moran, Macleary organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 9 givenname: Ahmet Mete orcidid: 0000-0001-8679-9367 surname: Muslu fullname: Muslu, Ahmet Mete organization: George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States – sequence: 10 givenname: Ching-Ping surname: Wong fullname: Wong, Ching-Ping email: cp.wong@mse.gatech.edu organization: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States |
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Keywords | Thermal interfacial connection Semiconductor packaging Epoxy nanocomposites graphene nanosheets In-situ formed silver nanoparticles |
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SubjectTerms | Epoxy nanocomposites graphene nanosheets In-situ formed silver nanoparticles Semiconductor packaging Thermal interfacial connection |
Title | A fundamental study of improving thermal interface connection by using silane modified, in-situ formed silver-graphene fillers in epoxy polymers for future semiconductor device packaging |
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