Phase-shift full bridge power supply based on SiC devices - Liu, Guobing; Wang, Kui; Qu, Cangqi; Liu, Shaogang; Jia, Qi; Li, Yongdong (Journal of engineering (Stevenage, England), 2018)
Keywords: bridge ZVS DC‐DC converter; DC‐DC power convertors; double pulse test circuit; frequency 50.0 Hz; gate resistances; invertors; Matlab‐Simulink simulation; metal oxide semiconductor field effect transistor; MOSFET; MOSFET circuits; parasitic parameters; phase‐shift full bridge power supply; power supply circuits; power supply parameter design; power supply parameters; rectifier circuit; rectifying circuits; Schottky diode; Schottky diodes; SiC; silicon compounds; single‐phase full bridge inverter; switch tube; switching characteristics; switching convertors; switching frequency; switching loss reduction; transformer side parasitic oscillation; voltage 270 V to 220 V; voltage 350.0 V; wide band gap semiconductors; zero voltage switching; switching frequency; MOSFET; switching characteristics; switch tube; power supply circuits; gate resistances; power supply parameters; metal oxide semiconductor field effect transistor; SiC; switching convertors; invertors; MOSFET circuits; phase-shift full bridge power supply; rectifier circuit; Schottky diodes; double pulse test circuit; parasitic parameters; bridge ZVS DC-DC converter; single-phase full bridge inverter; transformer side parasitic oscillation; zero voltage switching; power supply parameter design; DC-DC power convertors; voltage 350.0 V; voltage 270 V to 220 V; rectifying circuits; silicon compounds; switching loss reduction; Matlab-Simulink simulation; wide band gap semiconductors; frequency 50.0 Hz; Schottky diode