Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers : Experiment and modeling
In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the output characteristics of 1.3- mu m InGaAsP-InP multiple-quantum-well (MQW) lasers. The relationship between the p-doping profile before and afte...
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Published in | IEEE journal of quantum electronics Vol. 35; no. 10; pp. 1515 - 1520 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Institute of Electrical and Electronics Engineers
01.10.1999
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Abstract | In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the output characteristics of 1.3- mu m InGaAsP-InP multiple-quantum-well (MQW) lasers. The relationship between the p-doping profile before and after regrowth is established, and the subsequent impact of changes in the p-i junction placement on the device output characteristics, is demonstrated. Device characteristics are simulated including carrier transport, capture of carriers into the quantum wells, the quantum mechanical calculation of the properties of the wells, and the solution for the optical mode and its population self-consistently as a function of diode bias. The simulations predict and the experiments confirm that an optimum p-i junction placement simultaneously maximizes external efficiency and minimizes threshold current. Tuning of the base epitaxial growth Zn profile allows one to fabricate MQW devices with a threshold current of approximately 80 A/cm super(2) per well for devices with nine QW's at room temperature or lasers with a characteristic temperature T sub(0)=70 K within the temperature range of 20 degree C-80 degree C |
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AbstractList | In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the output characteristics of 1.3- mu m InGaAsP-InP multiple-quantum-well (MQW) lasers. The relationship between the p-doping profile before and after regrowth is established, and the subsequent impact of changes in the p-i junction placement on the device output characteristics, is demonstrated. Device characteristics are simulated including carrier transport, capture of carriers into the quantum wells, the quantum mechanical calculation of the properties of the wells, and the solution for the optical mode and its population self-consistently as a function of diode bias. The simulations predict and the experiments confirm that an optimum p-i junction placement simultaneously maximizes external efficiency and minimizes threshold current. Tuning of the base epitaxial growth Zn profile allows one to fabricate MQW devices with a threshold current of approximately 80 A/cm super(2) per well for devices with nine QW's at room temperature or lasers with a characteristic temperature T sub(0)=70 K within the temperature range of 20 degree C-80 degree C |
Author | SMITH, L. E DONETSKY, D. V ALAM, M. A KAZARINOV, R. F BELENKY, G. L SHTENGEL, G. E HYBERTSEN, M. S WINN, J REYNOLDS, C. L SMITH, R. K BARAFF, G. A |
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CitedBy_id | crossref_primary_10_1016_j_pquantelec_2020_100303 crossref_primary_10_1063_1_1581978 crossref_primary_10_1063_1_1613998 crossref_primary_10_1109_JSTQE_2003_820911 crossref_primary_10_1109_JQE_2004_830207 crossref_primary_10_1109_JQE_2003_821536 crossref_primary_10_1063_1_2401051 crossref_primary_10_1109_JSTQE_2003_818859 crossref_primary_10_1109_LPT_2004_840815 crossref_primary_10_1063_1_1591238 crossref_primary_10_1109_JQE_2002_806195 crossref_primary_10_1142_S0129156498000385 crossref_primary_10_1049_ip_opt_20040633 crossref_primary_10_1063_1_1572470 crossref_primary_10_1070_QE2009v039n01ABEH013933 crossref_primary_10_1109_JSTQE_2009_2015679 crossref_primary_10_1088_0953_8984_16_31_020 crossref_primary_10_1109_JLT_2018_2806942 crossref_primary_10_1049_el_20052347 crossref_primary_10_1109_16_870572 crossref_primary_10_1109_JQE_2002_802441 crossref_primary_10_1063_1_1289054 crossref_primary_10_1109_68_867977 crossref_primary_10_1143_JJAP_44_6204 crossref_primary_10_1109_3_825885 |
Cites_doi | 10.1109/16.370077 10.1007/s003390050140 10.1109/3.511558 10.1109/JQE.1983.1071954 10.1109/ISCS.1998.711755 10.1063/1.113488 10.1117/12.275621 10.1109/68.643259 10.1109/3.35720 10.1109/68.403988 10.1063/1.93841 10.1049/el:19960423 10.1109/3.234412 10.1049/el:19950764 10.1117/12.316671 10.1063/1.359265 10.1063/1.95127 10.1109/CLEO.1998.676197 10.1063/1.114474 10.1109/3.272061 10.1109/2944.605650 10.1109/68.481106 |
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Keywords | Crystal growth Temperature dependence Gallium arsenides Theoretical study Multiple quantum well Binary compounds Threshold current Doping profiles Leakage currents Experimental study MOCVD Indium arsenides Optical losses Gallium phosphides Semiconductor lasers Infrared laser Indium phosphides Heterojunctions Quantum well lasers Quaternary compounds |
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References | ref13 ref12 shah (ref22) 1993 ref23 ref14 belenky (ref9) 1996; 32 ref20 niwa (ref10) 1996; 8 ref11 ref21 shtengel (ref15) 1995; 31 ref2 ref1 ref17 ref16 ref19 ref18 ref8 ref7 ref4 ref3 ref6 ref5 |
References_xml | – ident: ref11 doi: 10.1109/16.370077 – start-page: 180 year: 1993 ident: ref22 article-title: auger recombination coefficients in in$_{0.53}$ga$_{0.47}$as publication-title: Properties of Lattice-Matched and Strained Indium Gallium Arsenide contributor: fullname: shah – ident: ref4 doi: 10.1007/s003390050140 – volume: 32 start-page: 1450 year: 1996 ident: ref9 article-title: effect of $p$-doping profile on the performance of ingaasp/inp mqw lasers publication-title: IEEE Journal of Quantum Electronics doi: 10.1109/3.511558 contributor: fullname: belenky – ident: ref21 doi: 10.1109/JQE.1983.1071954 – ident: ref20 doi: 10.1109/ISCS.1998.711755 – ident: ref2 doi: 10.1063/1.113488 – ident: ref18 doi: 10.1117/12.275621 – ident: ref13 doi: 10.1109/68.643259 – ident: ref1 doi: 10.1109/3.35720 – ident: ref7 doi: 10.1109/68.403988 – ident: ref5 doi: 10.1063/1.93841 – ident: ref3 doi: 10.1049/el:19960423 – ident: ref16 doi: 10.1109/3.234412 – volume: 31 start-page: 1157 year: 1995 ident: ref15 article-title: internal optical loss measurements in 1.3 $\mu$m ingaasp/inp lasers publication-title: Electronics Letters doi: 10.1049/el:19950764 contributor: fullname: shtengel – ident: ref19 doi: 10.1117/12.316671 – ident: ref17 doi: 10.1063/1.359265 – ident: ref6 doi: 10.1063/1.95127 – ident: ref14 doi: 10.1109/CLEO.1998.676197 – ident: ref23 doi: 10.1063/1.114474 – ident: ref8 doi: 10.1109/3.272061 – ident: ref12 doi: 10.1109/2944.605650 – volume: 8 start-page: 328 year: 1996 ident: ref10 article-title: doping-type dependence of turn-on delay time in 1.3-$\mu$m ingaasp-inp modulation-doped strained quantum-well lasers publication-title: IEEE Photonics Technology Letters doi: 10.1109/68.481106 contributor: fullname: niwa |
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SubjectTerms | Computing time Devices Efficiency, stability, gain, and other operational parameters Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser optical systems: design and operation Lasers Mathematical models Optics Physics Placement Semiconductor lasers; laser diodes Simulation Threshold currents Tuning |
Title | Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers : Experiment and modeling |
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