Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer

• Published in: Chinese physics letters Vol. 29; no. 9; pp. 97304 - 1-097304-3
• Main Authors: Wen, Xiao-Xia, Yang, Xiao-Dong, He, Miao, Li, Yang, Wang, Geng, Lu, Ping-Yuan, Qian, Wei-Ning, Li, Yun, Zhang, Wei-Wei, Wu, Wen-Bo, Chen, Fang-Sheng, Ding, Li-Zhen
• Format: Journal Article
• Language: English
• Published: 01.09.2012
• Subjects: Augers; Blocking; Computer simulation; Devices; Electric power generation; Light-emitting diodes; Mathematical models; Origins

GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program. It is found that the structure with an AlInN electron blocking layer shows improved light output...