Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer
GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program. It is found that the structure with an AlInN electron blocking layer shows improved light output...
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Published in | Chinese physics letters Vol. 29; no. 9; pp. 97304 - 1-097304-3 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.09.2012
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Subjects | |
Online Access | Get full text |
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