Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer

GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program. It is found that the structure with an AlInN electron blocking layer shows improved light output...

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Bibliographic Details
Published inChinese physics letters Vol. 29; no. 9; pp. 97304 - 1-097304-3
Main Authors Wen, Xiao-Xia, Yang, Xiao-Dong, He, Miao, Li, Yang, Wang, Geng, Lu, Ping-Yuan, Qian, Wei-Ning, Li, Yun, Zhang, Wei-Wei, Wu, Wen-Bo, Chen, Fang-Sheng, Ding, Li-Zhen
Format Journal Article
LanguageEnglish
Published 01.09.2012
Subjects
Augers
Blocking
Computer simulation
Devices
Electric power generation
Light-emitting diodes
Mathematical models
Origins
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Summary:GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program. It is found that the structure with an AlInN electron blocking layer shows improved light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly accounted for by efficient electron blocking. It can be concluded that Auger recombination is responsible for the dominant origin of the efficiency droop of a GaN-based LED as current increases.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/29/9/097304