Initial and secondary oxidation products on the Si(111)-(7 × 7) surface identified by atomic force microscopy and first principles calculations

• Published in: Applied physics letters Vol. 104; no. 13
• Main Authors: Onoda, Jo, Ondráček, Martin, Yurtsever, Ayhan, Jelínek, Pavel, Sugimoto, Yoshiaki
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 31.03.2014
• Subjects: Adatoms; Applied physics; ATOMIC FORCE MICROSCOPY; ATOMS; Bright spots; Chemical bonds; DENSITY FUNCTIONAL METHOD; Density functional theory; First principles; MATERIALS SCIENCE; Mathematical analysis; Microscopes; Microscopy; OXIDATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; TEMPERATURE RANGE 0273-0400 K

We investigate the initial and secondary oxidation products on the Si(111)-(7 × 7) surface at room-temperature using atomic force microscopy (AFM) and density functional theory calculations. At the initial oxidation stages, we find that there are two types of bright spots in AFM images. One of them...