Atomic scale epitaxial growth of BaTiO3 thin films by laser molecular beam epitaxy

By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxial growth of BaTiO3(BTO) thin films on SrTiO3 (STO) substrates is achieved. Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microsc...

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Published inScience China. Mathematics Vol. 40; no. 5; pp. 522 - 527
Main Author 王会生 马昆 刘彦巍 彭志强 崔大复 吕惠宾 周岳亮 陈正豪 李林 杨国桢
Format Journal Article
LanguageEnglish
Published Heidelberg Springer Nature B.V 01.05.1997
Subjects
analysis
Barium titanates
BaTiO3
beam
Electron diffraction
Electron microscopy
Epitaxial growth
epitaxy
ferroelectric
Ferroelectric materials
Ferroelectricity
Heterostructures
High energy electrons
laser
molecular
Molecular beam epitaxy
Multilayers
properties
Single crystals
structural
Substrates
thin
Thin films
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ISSN1674-7283
1006-9283
1869-1862
1862-2763
DOI10.1007/BF02896960

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Summary:By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxial growth of BaTiO3(BTO) thin films on SrTiO3 (STO) substrates is achieved. Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microscopy reveal that the BTO films are c-axis oriented single crystals with smooth surface. The multi-layer ferroelectric/superconducting heterostructures are also prepared and the ferroelectric properties of BTO films are studied. The results show that by using L-MBE technique, high quality BTO films and improved device performance can be obtained.
Bibliography:WANG Huisheng MA Kun , LIU YanweiPENG Zhiqiang , CUI Dafu LU HuibinZHOU Yueliang CHEN Zhenghao , LI Lin and YANG Guozhen(Laboratoryof Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academyof Sciences, Beijing 100080, China)
11-5837/O1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:1674-7283
1006-9283
1869-1862
1862-2763
DOI:10.1007/BF02896960