(Invited) Engineering Strain, Defects, and Electronic Properties of (110)-Oriented Strained Si

• Published in: ECS transactions Vol. 98; no. 5; pp. 277 - 290
• Main Authors: Arimoto, Keisuke, Yamanaka, Junji, Hara, Kosuke O, Sawano, Kentarou, Usami, Noritaka, Nakagawa, Kiyokazu
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society, Inc 08.09.2020

Strain engineering of group IV semiconductors has been extensively investigated with an aim to produce high mobility platform for high performance electronic devices. The lattice strain significantly affects the carrier mobility via modulation of the energy band structure and its effect on the cryst...