Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation

• Published in: Coatings (Basel) Vol. 10; no. 2; p. 146
• Main Authors: Liang, Guoying, Zhong, Haowen, Wang, Yinong, Zhang, Shijian, Xu, Mofei, Kuang, Shicheng, Ren, Jianhui, Zhang, Nan, Yan, Sha, Yu, Xiao, Remnev, Gennady Efimovich, Le, Xiaoyun
• Format: Journal Article
• Language: English
• Published: 01.02.2020

The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si35 cluster ion implantations were investigated by molecular dynamics simulations in the present work. The pat...